- 您現在的位置：買賣IC網 > PDF目錄359218 > MRF6P18190HR6 (飛思卡爾半導體(中國)有限公司) RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET PDF資料下載
參數資料
| 型號： | MRF6P18190HR6 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | RF功率場效應晶體管N溝道增強型MOSFET的側向 |
| 文件頁數： | 5/12頁 |
| 文件大小： | 469K |
| 代理商： | MRF6P18190HR6 |
MRF6P18190HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
p
,
I
I
18
8
12
16
1920
1760
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ P
out
= 44 Watts
1900
1880
1860
1840
1820
1800
1780
16.5
16.3
44
28.2
27.8
36
38
42
η
D
,
E
η
D
16.1
15.9
15.7
15.6
15.5
16.4
16.2
16
15.8
28
27.6
27.4
34
40
10
14
V
DD
= 28 Vdc
P
out
= 44 W (Avg.)
I
DQ
= 2000 mA, 2Carrier WCDMA
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
G
p
,
I
I
18
8
12
16
1920
1760
IRL
G
ps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ P
out
= 88 Watts
1900
1880
1860
1840
1820
1800
1780
15.8
15.6
32
40.4
39.6
26
28
30
η
D
,
E
η
D
15.4
15.3
15.1
15
15.7
15.5
15.2
40
39.2
24
10
14
V
DD
= 28 Vdc, P
out
= 88 W (Avg.)
I
DQ
= 2000 mA, 2Carrier WCDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
Figure 5. Two-Tone Power Gain versus
Output Power
13.5
17.5
0.1
I
DQ
= 2600 mA
2300 mA
P
out
, OUTPUT POWER (WATTS) PEP
17
16
15
10
100
G
p
,
14
2000 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
1
P
out
, OUTPUT POWER (WATTS) PEP
100
35
40
45
50
55
10
I
I
30
16.5
15.5
14.5
1
1700 mA
1400 mA
V
DD
= 28 Vdc, f1 = 1837.5 MHz
f2 = 1847.5 MHz, TwoTone
Measurements, 10 MHz Tone Spacing
I
DQ
= 2600 mA
2300 mA
2000 mA
1700 mA
1400 mA
V
DD
= 28 Vdc, f1 = 1837.5 MHz, f2 = 1847.5 MHz
TwoTone Measurements, 10 MHz Tone Spacing
300
相關PDF資料 |
PDF描述 |
|---|---|
| MRF6P21190HR6 | RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P23190HR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P24190HR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160HR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF6P21190HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P21190HR6 | 功能描述:射頻MOSFET電源晶體管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6P21190HR6_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P21190HR6_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P23190H_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復。