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參數(shù)資料
| 型號(hào)： | MRF6S19140HR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | N溝道增強(qiáng)型MOSFET的外側(cè) |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 399K |
| 代理商： | MRF6S19140HR3 |
6
RF Device Data
Freescale Semiconductor
MRF6S19140HR3 MRF6S19140HSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
60
0
0.1
7th Order
TWOTONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 160 W (PEP), I
DQ
= 1150 mA
TwoTone Measurements, Center Frequency = 1960 MHz
5th Order
3rd Order
10
20
30
40
50
1
100
Figure 8. Pulse CW Output Power versus
Input Power
Figure 9. 2-Carrier N-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
70
P
out
, OUTPUT POWER (WATTS) AVG.
50
20
40
30
30
40
50
10
60
1
10
100
20
V
DD
= 28 Vdc, I
DQ
= 1150 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2Carrier NCDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
T
C
= 25
°
C
42
58
31
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 1150 mA
Pulsed CW, 8
μ
sec(on), 1 msec(off)
Center Frequency = 1960 MHz
56
54
52
50
46
32
34
33
36
35
39
37
Actual
Ideal
P1dB = 52.3 dBm (171 W)
57
55
51
53
49
38
40
41
28
100
10
17
1
0
70
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc, I
DQ
= 1150 mA
f = 1960 MHz, T
C
= 25
°
C
10
16
15
14
13
12
11
60
50
40
30
20
10
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 32 V
IM3
G
ps
ACPR
η
D
,
p
,
I
I
η
D
,
D
G
ps
η
D
G
p
,
250
8
18
0
200
50
17
13
12
11
10
9
100
150
15
14
16
28 V
I
DQ
= 1150 mA
f = 1960 MHz
P
o
,
G
p
,
48
47
30
29
P3dB = 53.1 dBm (204 W)
η
D
300
24 V
20 V
16 V
12 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S19140HR3_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19140HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19140HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S19140HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19140HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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