參數(shù)資料
型號(hào)： MRF6S19140HR3
廠商： 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述： N-Channel Enhancement-Mode Lateral MOSFETs
中文描述： N溝道增強(qiáng)型MOSFET的外側(cè)
文件頁數(shù)： 7/12頁
文件大?。?/td> 399K
代理商： MRF6S19140HR3
MRF6S19140HR3 MRF6S19140HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
10
10
90
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
±
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D2
for MTTF in a particular application.
10
9
10
8
10
7
110
130
150
170
190
M
2
)
100
120
140
160
180
200
N-CDMA TEST SIGNAL
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 13. 2-Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
2
4
6
8
f, FREQUENCY (MHz)
100
0
Figure 14. 2-Carrier N-CDMA Spectrum
10
20
30
40
50
60
70
80
90
ACPR @ 30 kHz
Integrated BW
+ACPR @ 30 kHz
Integrated BW
IM3 @
1.2288 MHz
Integrated BW
+IM3 @
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
6
1.5
4.5
3
0
1.5
3
4.5
6
7.5
7.5
(
IS95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±
885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @
±
2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
P
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6S19140HR3_07 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19140HR5 功能描述:射頻MOSFET電源晶體管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S19140HS 制造商:Freescale Semiconductor 功能描述:
MRF6S19140HSR3 功能描述:射頻MOSFET電源晶體管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6S19140HSR5 功能描述:射頻MOSFET電源晶體管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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