參數(shù)資料
型號(hào)： MRF9045M
廠商： Motorola, Inc.
英文描述： The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
中文描述： 該射頻亞微米MOSFET的線射頻功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的側(cè)向
文件頁(yè)數(shù)： 5/8頁(yè)
文件大小： 153K
代理商： MRF9045M
5
MRF9045M MRF9045MR1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
–60
–55
–50
–45
–40
–35
–30
–25
0.5
1
10
100
5
10
15
20
25
30
35
40
45
50
900
920
940
960
980
1000
–35
–25
–15
–5
0
10
20
30
40
50
60
0.5
1
10
100
G
,
Figure 3. Class AB Test Circuit Performance
Figure 4. Power Gain, Efficiency and IRL versus
Output Power
Figure 5. Intermodulation Distortion versus
Output Power
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
I
I
IDQ = 500 mA
Gps
IMD3
IRL
VDD = 28 Vdc
Pout = 45 Watts (PEP)
IDQ = 350 mA
Two–Tone Measurement
100 kHz Tone Spacing
,
f, FREQUENCY (MHz)
–60
–50
–40
–30
–20
–10
0
VDD = 28 Vdc
f = 945 MHz
Two–Tone Measurement
100 kHz Tone Spacing
IDQ = 350 mA
IDQ = 200 mA
G
,
I
,
I
–70
–65
–60
–55
–50
–45
–40
–35
–30
–25
–20
1
10
100
Figure 6. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
I
3rd Order
5th Order
7th Order
VDD = 28 Vdc
IDQ = 350 mA
f = 945 MHz
Two–Tone Measurement,
100 kHz Tone Spacing
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
22
24
26
28
30
32
5
0.5
10
15
20
1
10
100
0
10
20
30
40
50
60
Pout, OUTPUT POWER (WATTS CW)
Figure 7. CW Power Gain and Drain Efficiency
versus Output Power
VDD, DRAIN VOLTAGE (VOLTS)
Figure 8. Output Voltage versus Supply Voltage
G
,
P
Pin = 0.3 W
Pin = 0.6 W
Pin = 1 W
IDQ = 350 mA
f = 945 MHz
Two–Tone Measurement
100 kHz Tone Spacing
VDD = 28 Vdc
IDQ = 350 mA
f = 945 MHz
Gps
VDD = 28 Vdc
IDQ = 350 mA
f = 945 MHz
Two–Tone Measurement
100 kHz Tone Spacing
Gps
IRL
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF9045MBR1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF9045MR1 制造商:Freescale Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述:
MRF9045NBR1 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF9045NR1 功能描述:射頻MOSFET電源晶體管 45W 1GHZ RF LDMOS TO270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9045NR1-CUT TAPE 制造商:Freescale 功能描述:MRF9045 Series 945 MHz 45 W 28 V Lateral N-Channel RF Power MOSFET
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