參數(shù)資料
型號(hào)： MRF9045M
廠商： Motorola, Inc.
英文描述： The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
中文描述： 該射頻亞微米MOSFET的線射頻功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的側(cè)向
文件頁(yè)數(shù)： 7/8頁(yè)
文件大?。?/td> 153K
代理商： MRF9045M
7
MRF9045M MRF9045MR1
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
(TO–270)
CASE 1265–06
ISSUE E
DATUM
BOTTOM VIEW
A
E4
E
D
E1
D2
A
EXPOSED
HEATSINK AREA
A
B
D
H
PIN ONE ID
D
A
M
a
D
A
M
a
D
2
b
2
D
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M–1994.
3. DATUMPLANE –H– IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS
“
D1” AND
“
E1” DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS
“
D1” AND
“
E1” DO
INCLUDE MOLD MISMATCH AND ARE DETER-
MINED AT DATUMPLANE –H–.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUMMATERIAL
CONDITION.
6. DATUMS –A– AND –B– TO BE DETERMINED AT
DATUMPLANE –H–.
7. DIMENSION A2 APPLIES WITHIN ZONE
“
J” ONLY.
N
c
F
ZONE J
E2
A
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
F
b1
c1
aaa
MIN
.076
.038
.040
.416
.376
.290
.016
.436
.236
.066
.150
.058
.025 BSC
MAX
.084
.044
.042
.424
.384
.320
.024
.444
.244
.074
.180
.066
MIN
1.93
0.96
1.02
10.57
9.55
7.37
0.41
11.07
5.99
1.68
3.81
1.47
MAX
2.13
1.12
1.07
10.77
9.75
8.13
0.61
11.28
6.20
1.88
4.57
1.68
MILLIMETERS
INCHES
.193
.007
.199
.011
4.90
0.18
5.06
0.28
.004
0.64 BSC
0.10
PIN 1
PIN 2
PIN 3
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF9045MBR1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF9045MR1 制造商:Freescale Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述:
MRF9045NBR1 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF9045NR1 功能描述:射頻MOSFET電源晶體管 45W 1GHZ RF LDMOS TO270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9045NR1-CUT TAPE 制造商:Freescale 功能描述:MRF9045 Series 945 MHz 45 W 28 V Lateral N-Channel RF Power MOSFET
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