參數(shù)資料
型號(hào): MRF9045M
廠商: Motorola, Inc.
英文描述: The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
中文描述: 該射頻亞微米MOSFET的線射頻功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的側(cè)向
文件頁數(shù): 6/8頁
文件大?。?/td> 153K
代理商: MRF9045M
MRF9045M MRF9045MR1
6
MOTOROLA RF DEVICE DATA
Figure 9. Series Equivalent Input and Output Impedance
f
MHz
Zin
ZOL*
930
945
0.81 + j0.25
0.85 + j0.05
2.03 – j0.09
2.03 – j0.28
Zin
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
VDD = 28 V, IDQ = 350 mA, Pout = 45 W (PEP)
f = 945 MHz
Zo = 10
Zin
ZOL*
Note: ZOL*was chosen based on tradeoffs between gain, output
power drain efficiency and intermodulation distortion.
Zin
ZOL*
Input
Matching
Network
Device
Under Test
Output
Matching
Network
f = 930 MHz
f = 945 MHz
f = 930 MHz
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF9045MBR1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF9045MR1 制造商:Freescale Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述:
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MRF9045NR1 功能描述:射頻MOSFET電源晶體管 45W 1GHZ RF LDMOS TO270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9045NR1-CUT TAPE 制造商:Freescale 功能描述:MRF9045 Series 945 MHz 45 W 28 V Lateral N-Channel RF Power MOSFET