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參數(shù)資料
| 型號： | MRF957T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon Low Noise, High-Frequency Transistors |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419-02, 3 PIN |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 215K |
| 代理商： | MRF957T1 |
MMBR951 MRF957 MRF9511 SERIES
12
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
MRF957T1
0
10
0.1
1
IC, COLLECTOR CURRENT (mA)
Figure 16. Gain–Bandwidth Product versus
Collector Current
Figure 17. Associated Gain versus
Collector Current
f
10
8
6
4
2
100
20
16
12
8
4
30
20
10
1
2
5
G
IC, COLLECTOR CURRENT (mA)
NF
VCE = 6 V
f = 1 GHz
3
2
1
N
32
28
24
20
16
12
8
4
0
0.1
0.2
0.3
0.5
1
2
3
5.1
G
f, FREQUENCY (GHz)
Figure 18. Insertion Gain and Maximum
Stable Power Gain versus Frequency
MSG
VCE = 6 V
IC = 5 mA
25
20
15
10
5
0
0.3
0.5
1
1.5
5
4
3
2
1
0
F
N
G
f, FREQUENCY (GHz)
Figure 19. Noise Figure and Associated
Gain versus Frequency
|S21|2
GNF
NF
VCE = 6 V
IC = 5 mA
j2.0
j1.0
j0.5
j0.2
–j0.2
–j0.5
–j1.0
–j2.0
0.2
0.5
1
2
j2.0
j1.0
j0.5
j0.2
–j0.2
–j0.5
–j1.0
–j2.0
0.2
0.5
1
2
f
(GHz)
NF
OPT
2.0 dB 0.21
∠
54
°
Γ
o
RN
14
K
1.5
1.02
f
(GHz)
NF
OPT
1.5 dB 0.27
∠
97
°
Γ
o
RN
10
K
1.0
0.91
VCE = 6.0 V
IC = 5.0 mA
VCE = 6.0 V
IC = 5.0 mA
Figure 20. Constant Gain and Noise Figure Contours
f = 1.0 GHz
Figure 21. Constant Gain and Noise Figure Contours
f = 1.5 GHz
15.2
15.0
14.0
1.5
2.0
2.3
11.8
11.0
10.0
3.0
2.5
2.0
GNF
AREA OF INSTABILITY
INPUT
OUTPUT
Γ
o
Γ
o
Γ
ms
VCE = 5 V
f = 1 GHz
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