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參數(shù)資料
| 型號(hào)： | MRF957T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN Silicon Low Noise, High-Frequency Transistors |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419-02, 3 PIN |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 215K |
| 代理商： | MRF957T1 |
MMBR951 MRF957 MRF9511 SERIES
2
MOTOROLA RF DEVICE DATA
MAXIMUM RATINGS
Rating
Symbol
MMBR951LT1
MMBR951ALT1
MRF9511LT1
MRF957T1
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
PD(max)
10
10
10
Vdc
Collector–Base Voltage
20
20
20
Vdc
Emitter–Base Voltage
1.5
1.5
15
Vdc
Power Dissipation (1) TC = 75
°
C
Derate linearly above Tcase = 75
°
C @
0.322
4.29
0.322
4.29
0.227
3.03
Watts
mW/
°
C
Collector Current — Continuous (2)
IC
100
100
100
mA
Maximum Junction Temperature
TJmax
Tstg
R
θ
JC
150
150
150
°
C
Storage Temperature
–55 to +150
–55 to +150
–55 to +150
°
C
Thermal Resistance, Junction to Case
233
233
330
°
C/W
DEVICE MARKING
MRF9511LT1 = 11
MMBR951ALT1 = AAG
MMBR951LT1 = 7Z
MRF957T1 = B
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(3)
Collector–Emitter Breakdown Voltage
(IC = 0.1 mA, IB = 0)
V(BR)CEO
10
13
—
Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
V(BR)CBO
20
25
—
Vdc
Emitter Cutoff Current
(VEB = 1.0 V, IC = 0)
IEBO
—
—
0.1
μ
Adc
Collector Cutoff Current
(VCB = 10 V, IE = 0)
ICBO
—
—
0.1
μ
Adc
ON CHARACTERISTICS
(3)
DC Current Gain
(VCE = 6.0 V, IC = 5.0 mA)
(VCE = 6.0 V, IC = 5.0 mA)
All
MMBR951ALT1
hFE
50
75
—
—
200
150
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Ccb
—
0.45
1.0
pF
Current Gain — Bandwidth Product
(VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz)
MRF9511LT1, MMBR951LT1, MMBR951ALT1
MRF957T1
fT
—
—
8.0
9.0
—
—
GHz
NOTES:
1. To calculate the junction temperature use TJ = (PD x R
θ
JA) + TCASE. Case temperature measured on collector lead immediately adjacent
to body of package.
2. IC — Continuous (MTBF
≈
10 years).
3. Pulse width
≤
300
μ
s, duty cycle
≤
2% pulsed.
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