參數(shù)資料
型號(hào): MRF957T1
廠商: MOTOROLA INC
元件分類: 小信號(hào)晶體管
英文描述: NPN Silicon Low Noise, High-Frequency Transistors
中文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: CASE 419-02, 3 PIN
文件頁(yè)數(shù): 3/16頁(yè)
文件大?。?/td> 215K
代理商: MRF957T1
3
MMBR951 MRF957 MRF9511 SERIES
MOTOROLA RF DEVICE DATA
PERFORMANCE CHARACTERISTICS
Conditions
Symbol
MRF9511LT1
MMBR951LT1
MMBR951ALT1
MRF957T1
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Insertion Gain
(VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 30 mA, f = 2.0 GHz)
(VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz)
Maximum Unilateral Gain (1)
(VCE = 8.0 V, IC = 30 mA, f = 1.0 GHz)
(VCE = 8.0 V, IC = 30 mA, f = 2.0 GHz)
(VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz)
Noise Figure — Minimum (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz)
Associated Gain at Minimum NF (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz)
Noise Figure — 50 ohm Source
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
NOTE:
1. Maximum Unilateral Gain is GUmax =
|S21|2
14.5
9.0
12.5
7.0
13.3
10.1
dB
GU max
17
10.5
14
8.0
14
10.8
dB
NFMIN
1.3
2.1
1.3
2.1
1.5
2.0
dB
GNF
14
9.0
13
7.5
11.8
9.0
dB
NF50
1.9
2.8
1.9
2.8
1.9
2.8
dB
|S21|2
(1–|S11|2)(1–|S22|2)
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