參數(shù)資料
型號(hào)： MSP430A018IPN
廠商： TEXAS INSTRUMENTS INC
元件分類： 微控制器/微處理器
英文描述： 16-BIT, FLASH, 8 MHz, RISC MICROCONTROLLER, PQFP80
封裝： GREEN, PLASTIC, QFP-80
文件頁(yè)數(shù)： 39/73頁(yè)
文件大?。?/td> 1284K
代理商： MSP430A018IPN
MSP430FG43x
MIXED SIGNAL MICROCONTROLLER
SLAS380B APRIL 2004 REVISED JUNE 2007
44
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating free-air temperature (unless otherwise
noted)
operational amplifier OA, supply specifications
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC
Supply voltage
—
2.2
3.6
V
Fast Mode RRIP OFF
2 2 V/3 V
180
290
Fast Mode, RRIP OFF
2.2 V/3 V
180
290
Medium Mode RRIP OFF
2 2 V/3 V
110
190
Medium Mode, RRIP OFF
2.2 V/3 V
110
190
I
Supply current
Slow Mode, RRIP OFF
2.2 V/3 V
50
80
A
ICC
Supply current
(see Note 1)
Fast Mode RRIP ON
2 2 V/3 V
300
490
μA
ICC
(see Note 1)
Fast Mode, RRIP ON
2.2 V/3 V
300
490
μA
Medium Mode RRIP ON
2 2 V/3 V
190
350
Medium Mode, RRIP ON
2.2 V/3 V
190
350
Slow Mode RRIP ON
2 2 V/3 V
90
190
Slow Mode, RRIP ON
2.2 V/3 V
90
190
PSRR
Power supply rejection ratio
Non-inverting
2.2 V/3 V
70
dB
NOTES:
1. P6SEL.x = 1 for each corresponding pin when used in OA input or OA output mode.
operational amplifier OA, input/output specifications
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
V
Voltage supply I/P
RRIP OFF
—
0.1
VCC1.2
V
VI/P
Voltage supply, I/P
RRIP ON
—
0.1
VCC+0.1
V
I
Input leakage current, I/P
TA = 40 to +55_C
—
5
±0.5
5
nA
IIkg
Input leakage current, I/P
(see Notes 1 and 2)
TA = +55 to +85_C
—
20
±5
20
nA
Fast Mode
—
50
Medium Mode
fV(I/P) = 1 kHz
—
80
V
Voltage noise density I/P
Slow Mode
fV(I/P)
1 kHz
—
140
nV/
√Hz
Vn
Voltage noise density, I/P
Fast Mode
—
30
nV/
√Hz
Medium Mode
fV(I/P) = 10 kHz
—
50
Slow Mode
fV(I/P)
10 kHz
—
65
V
Offset voltage I/P
2 2 V/3 V
±10
mV
VIO
Offset voltage, I/P
2.2 V/3 V
±10
mV
Offset temperature drift, I/P
see Note 3
2.2 V/3 V
±10
μV/°C
Offset voltage drift
with supply, I/P
0.3V
≤ VIN ≤ VCC0.3V
ΔVCC≤ ± 10%, TA = 25°C
2.2 V/3 V
±1.5
mV/V
V
High level output voltage O/P
Fast Mode, ISOURCE ≤ 500μA
2.2 V
VCC0.2
VCC
V
VOH
High-level output voltage, O/P
Slow Mode,ISOURCE ≤ 150μA
3 V
VCC0.1
VCC
V
Low level output voltage O/P
Fast Mode, ISOURCE ≤ +500μA
2.2 V
VSS
0.2
V
VOL
Low-level output voltage, O/P
Slow Mode,ISOURCE ≤ +150μA
3 V
VSS
0.1
V
RLoad= 3 kΩ, CLoad = 50pF, RRIP ON,
VO/P(OAx) < 0.2 V
2.2 V/3 V
150
250
RO/P
(OAx)
Output
Resistance
(see Figure 29 and Note 4)
RLoad= 3 kΩ, CLoad = 50pF, RRIP ON,
VO/P(OAx) > AVCC 0.2 V
2.2 V/3 V
150
250
Ω
(OAx)
(see Figure 29 and Note 4)
RLoad= 3 kΩ, CLoad = 50pF, RRIP ON,
0.2 V
≤ VO/P(OAx) ≤ AVCC 0.2 V
2.2 V/3 V
0.1
4
CMRR
Common-mode rejection ratio
Non-inverting
2.2 V/3 V
70
dB
NOTES:
1. ESD damage can degrade input current leakage.
2. The input bias current is overridden by the input leakage current.
3. Calculated using the box method.
4. Specification valid for voltage-follower OAx configuration.
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