參數(shù)資料
型號： MSP430F249MPMEP
廠商： TEXAS INSTRUMENTS INC
元件分類： 微控制器/微處理器
英文描述： 16-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PQFP64
封裝： GREEN, PLASTIC, QFP-64
文件頁數(shù)： 58/81頁
文件大小： 1133K
代理商： MSP430F249MPMEP
MSP430F249-EP
MIXED SIGNAL MICROCONTROLLER
2008
61
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating free-air temperature (unless otherwise
noted) (continued)
flash memory
PARAMETER
TEST
CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC(PGM/
ERASE)
Program and erase supply voltage
2.2
3.6
V
fFTG
Flash timing generator frequency
257
476
kHz
IPGM
Supply current from DVCC during program
2.7 V/ 3.6 V
3
5
mA
IERASE
Supply current from DVCC during erase
2.7 V/ 3.6 V
3
7
mA
tCPT
Cumulative program time
See Note 1
2.7 V/ 3.6 V
4
ms
tCMErase
Cumulative mass erase time
See Note 2
2.7 V/ 3.6 V
200
ms
Program/erase endurance
104
105
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
35
tBlock, 0
Block program time for first byte or word
30
tBlock, 1-63
Block program time for each additional byte or word
See Note 3
21
t
tBlock, End
Block program end-sequence wait time
See Note 3
6
tFTG
tMass Erase
Mass erase time (see Note 4)
10593
tSeg Erase
Segment erase time
4819
NOTES: 1. The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
2. The mass erase duration generated by the flash timing generator is at least 11.1ms ( = 5297×1/fFTG,max = 5297×1/476kHz). To
achieve the required cumulative mass erase time the Flash Controller’s mass erase operation can be repeated until this time is met.
(A worst case minimum of 19 cycles are required).
3. These values are hardwired into the Flash Controller’s state machine (tFTG = 1/fFTG).
4. To erase the complete code area the mass erase has to be performed once with a dummy address in the range of the lower 64kB
Flash addresses and once with the dummy address in the upper 64kB Flash addresses.
5. Additional Flash retention documentation located in application report (SLAA392)
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