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參數(shù)資料
| 型號： | MT18JSF25672AY-1G1D1 |
| 元件分類： | DRAM |
| 英文描述： | 256M X 72 DDR DRAM MODULE, DMA240 |
| 封裝： | UDIMM-240 |
| 文件頁數(shù)： | 17/19頁 |
| 文件大?。?/td> | 644K |
| 代理商： | MT18JSF25672AY-1G1D1 |
PDF: 09005aef83606b46/Source: 09005aef83606afe
Micron Technology, Inc., reserves the right to change products or specifications without notice.
JSF18C256x72AZ.fm - Rev. A 9/08 EN
7
2008 Micron Technology, Inc. All rights reserved
2GB (x72, ECC, DR) 240-Pin DDR3 SDRAM UDIMM
General Description
The MT18JSF25672A DDR3 SDRAM module is a high-speed, CMOS dynamic random
access 2GB memory module, organized in a x72 configuration. This DDR3 SDRAM
module uses internally configured, 8-bank 1Gb DDR3 SDRAM devices.
DDR3 SDRAM modules use double data rate architecture to achieve high-speed opera-
tion. The double data rate architecture is essentially an 8n-prefetch architecture with an
interface designed to transfer two data words per clock cycle at the I/O pins. A single
read or write access for the DDR3 SDRAM module effectively consists of a single
8n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and eight corre-
sponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for
use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data
for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the
data strobes.
DDR3 SDRAM modules operate from a differential clock (CK and CK#); the crossing of
CK going HIGH and CK# going LOW will be referred to as the positive edge of CK.
Control, command, and address signals are registered at every positive edge of CK. Input
data is registered on both edges of DQS, and output data is referenced to both edges of
DQS, as well as to both edges of CK.
Fly-By Topology
These DDR3 modules use faster clock speeds than earlier DDR technologies, making
signal quality more important than ever. For improved signal quality, the clock, control,
command, and address buses have been routed in a fly-by topology, where each clock,
control, command, and address pin on each DRAM is connected to a single trace and
terminated (rather than a tree structure, where the termination is off the module near
the connector). Inherent to fly-by topology, the timing skew between the clock and DQS
signals can be easily accounted for by using the write-leveling feature of DDR3.
Temperature Sensor with Serial Presence-Detect EEPROM
Thermal Sensor Operations
The temperature from the integrated thermal sensor is monitored and converts into a
digital word via the I2C bus. System designers can use the user-programmable registers
to create a custom temperature-sensing solution based on system requirements.
Programming and configuration details comply with JEDEC Standard No. 21-C, page
4.7-1, “Mobile Platform Memory Module Thermal Sensor Component Specification.”
Serial Presence-Detect EEPROM Operation
DDR3 SDRAM modules incorporate serial presence-detect. The SPD data is stored in a
256-byte EEPROM. The first 128 bytes are programmed by Micron to comply with JEDEC
Standard JC-45 “Appendix X: Serial Presence-Detect (SPD) for DDR3 SDRAM Modules.”
These bytes identify module-specific timing parameters, configuration information, and
physical attributes. User-specific information can be written into the remaining
128 bytes of storage. READ/WRITE operations between the master (system logic) and
the slave EEPROM device occur via a standard I2C bus using the DIMM’s SCL (clock) and
SDA (data) signals, together with SA[2:0], which provide eight unique DIMM/EEPROM
addresses. Write protect (WP) is connected to Vss, permanently disabling hardware
write protect.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MT18JSF25672AY-1G1D1 TR | 制造商:Micron Technology Inc 功能描述:2GB 256MX72 DDR3 SDRAM MODULE PBF DIMM 1.5V NON BUF - Tape and Reel |
| MT18JSF25672AY-1G4D1 | 功能描述:MODULE DDR3 SDRAM 2GB 240-DIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT18JSF25672AZ-1G4G1 | 功能描述:MODULE DDR3 SDRAM 2GB 240UDIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT18JSF25672AZ-1G6G1 | 功能描述:MODULE DDR3 SDRAM 2GB 240UDIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT18JSF25672PDY-1G1D1 TR | 制造商:Micron Technology Inc 功能描述:2GB 256MX72 DDR3 SDRAM MODULE PBF DIMM 1.5V REGISTERED - Tape and Reel |
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