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參數(shù)資料
| 型號： | MT36JSZF51272PDY-1G6XX |
| 元件分類： | DRAM |
| 英文描述： | 512M X 72 DDR DRAM MODULE, DMA240 |
| 封裝： | LEAD FREE, MO-269, RDIMM-240 |
| 文件頁數(shù)： | 6/20頁 |
| 文件大?。?/td> | 441K |
| 代理商： | MT36JSZF51272PDY-1G6XX |
Electrical Specifications
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
Table 7: Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Units
VDD
VDD supply voltage relative to VSS
–0.4
1.975
V
VIN, VOUT
Voltage on any pin relative to VSS
–0.4
1.975
V
Table 8: Operating Conditions
Symbol Parameter
Min
Nom
Max
Units Notes
VDD
VDD supply voltage
1.425
1.5
1.575
V
VREFCA(DC) Input reference voltage command/ad-
dress bus
0.49 × VDD
0.5 × VDD
0.51 × VDD
V
VREFDQ(DC) I/O reference voltage DQ bus
0.49 × VDD
0.5 × VDD
0.51 × VDD
V
IVTT
Termination reference current from VTT
–600
–
+600
mA
VTT
Termination reference voltage (DC) –
command/address bus
0.49 × VDD - 20mV 0.5 × VDD 0.51 × VDD + 20mV
V
II
Input leakage current;
Any input 0V
≤ VIN ≤
VDD; VREF input 0V ≤ Vin
≤ 0.95V (All other pins
not under test = 0V)
Address in-
puts, RAS#,
CAS#, WE#,
S#, CKE, ODT,
BA, CK, CK#
TBD
A
DM
–8
0
8
IOZ
Output leakage current;
0V
≤ VOUT ≤ VDD; DQ
and ODT are disabled;
ODT is HIGH
DQ, DQS,
DQS#
–20
0
20
A
IVREF
VREF supply leakage current;
VREFDQ = VDD/2 or VREFCA = VDD/2
(All other pins not under test = 0V)
–36
0
36
A
TA
Module ambient
operating temperature
Commercial
0
–
70
°C
TC
DDR3 SDRAM compo-
nent case operating tem-
perature
Commercial
0
–
95
°C
Notes: 1. VTT termination voltage in excess of the stated limit will adversely affect the command
and address signals’ voltage margin and will reduce timing margins.
2. TA and TC are simultaneous requirements.
3. For further information, refer to technical note TN-00-08: “Thermal Applications,”
available on Micron’s Web site.
4. The refresh rate is required to double when 85°C < TC ≤ 95°C.
4GB (x72, ECC, QR) 240-Pin DDR3 SDRAM RDIMM
Electrical Specifications
PDF: 09005aef8343b5fe
jszf36c512x72pdy.pdf - Rev. D 3/11 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2008 Micron Technology, Inc. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT36JSZF51272PDZ-1G1G1 | 功能描述:MODULE DDR3 SDRAM 4GB 240RDIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT36JSZF51272PY-1G1D1 TR | 制造商:Micron Technology Inc 功能描述:4GB 512MX72 DDR3 SDRAM MODULE PBF DIMM 1.5V REGISTERED - Tape and Reel |
| MT36JSZF51272PY-1G4D1 | 制造商:Micron Technology Inc 功能描述:DRAM Module DDR3 SDRAM 4GByte 240RDIMM Tray |
| MT36JSZF51272PZ-1G4G1 | 功能描述:MODULE DDR3 SDRAM 4GB 240RDIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT36JSZF51272PZN/A1G1F1 | 制造商:Micron Technology Inc 功能描述:4GB REGISTERED ECC DDR3 1066MHZ - Trays |
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