參數(shù)資料
型號(hào): MT36JSZF51272PDY-1G6XX
元件分類: DRAM
英文描述: 512M X 72 DDR DRAM MODULE, DMA240
封裝: LEAD FREE, MO-269, RDIMM-240
文件頁(yè)數(shù): 7/20頁(yè)
文件大?。?/td> 441K
代理商: MT36JSZF51272PDY-1G6XX
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 9: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade
Component Speed Grade
-1G9
-107
-1G6
-125
-1G4
-15E
-1G1
-187E
-1G0
-187
-80C
-25E
-80B
-25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's mem-
ory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
4GB (x72, ECC, QR) 240-Pin DDR3 SDRAM RDIMM
DRAM Operating Conditions
PDF: 09005aef8343b5fe
jszf36c512x72pdy.pdf - Rev. D 3/11 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2008 Micron Technology, Inc. All rights reserved.
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