參數(shù)資料
型號(hào)： MT46V32M16BN-5BLIT
元件分類(lèi)： DRAM
英文描述： 32M X 16 DDR DRAM, 0.7 ns, PBGA60
封裝： 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60
文件頁(yè)數(shù)： 8/82頁(yè)
文件大?。?/td> 2855K
代理商： MT46V32M16BN-5BLIT
512Mb: x4, x8, x16
DDR SDRAM
09005aef80a1d9e7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MBDDRx4x8x16_2.fm - Rev. H 7/04 EN
16
2000 Micron Technology, Inc. All rights reserved.
Commands
Table 5 and Table 6 provide a quick reference of
available commands. This is followed by a verbal
description of each command. Two additional Truth
appear following “Operations” on page 19 and provide
current state/next state information.
NOTE:
1. CKE is HIGH for all commands shown except SELF REFRESH.
2. BA0–BA1 select either the mode register or the extended mode register (BA0 = 0, BA1 = 0 select the mode register;
BA0 = 1, BA1 = 0 select extended mode register; other combinations of BA0-BA1 are reserved). A0–A12 provide the op-
code to be written to the selected mode register.
3. BA0–BA1 provide bank address and A0–A12 provide row address.
4. BA0–BA1 provide bank address; A0–Ai provide column address, (where i=9 for x16, i=9,11 for x8, and i=9,11,12 for x4)
A10 HIGH enables the auto precharge feature (non persistent), and A10 LOW disables the auto precharge feature.
5. A10 LOW: BA0-BA1 determine which bank is precharged.
A10 HIGH: all banks are precharged and BA0-BA1 are “Don’t Care.”
6. This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW.
7. Internal refresh counter controls row addressing; for within the Self Refresh mode all inputs and I/Os are “Don’t Care”
except for CKE.
8. Applies only to read bursts with auto precharge disabled; this command is undefined (and should not be used) for read
bursts with auto precharge enabled and for write bursts.
9. DESELECT and NOP are functionally interchangeable.
NOTE:
1. Used to mask write data; provided coincident with the corresponding data.
Table 5:
Truth Table – Commands
Note 1 applies to all commands.
NAME (FUNCTION)
CS#
RAS#
CAS#
WE#
ADDR
NOTES
DESELECT (NOP)
H
XXX
X
9
NO OPERATION (NOP)
L
HHH
X
9
ACTIVE (Select bank and activate row)
L
H
Bank/Row
3
READ (Select bank and column, and start READ burst)
LH
Bank/Col
4
WRITE (Select bank and column, and start WRITE burst)
L
H
L
Bank/Col
4
BURST TERMINATE
LH
H
L
X
8
PRECHARGE (Deactivate row in bank or banks)
L
H
L
Code
5
AUTO REFRESH or SELF REFRESH
(Enter self refresh mode)
LLL
H
X
6, 7
LOAD MODE REGISTER
LLLL
Op-Code
2
Table 6:
Truth Table – DM Operation
Note 1 applies to all commands
NAME (FUNCTION)
DM
DQ
Write Enable
L
Valid
Write Inhibit
H
X
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