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| 型號(hào)： | MT46V64M4 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 16 Meg x 4 x 4 banks DDR SDRAM(16M x 4 x 4組,雙數(shù)據(jù)速率同步動(dòng)態(tài)RAM) |
| 中文描述： | 16梅格× 4 × 4銀行DDR SDRAM內(nèi)存（1,600 × 4 × 4組，雙數(shù)據(jù)速率同步動(dòng)態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 41/69頁(yè) |
| 文件大?。?/td> | 2410K |
| 代理商： | MT46V64M4 |
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41
256Mb: x4, x8, x16 DDR SDRAM
256Mx4x8x16DDR_B.p65
–
Rev. B; Pub. 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
256Mb: x4, x8, x16
DDR SDRAM
ADVANCE
TRUTH TABLE 4 – CURRENT STATE BANK
n
- COMMAND TO BANK
m
(Notes: 1-6; notes appear below and on next page)
CURRENT STATE
Any
CS# RAS# CAS# WE#
H
X
L
H
X
X
L
L
L
H
L
H
L
L
L
L
L
H
L
H
L
L
L
L
L
H
L
H
L
L
L
L
L
H
L
H
L
L
L
L
L
H
L
H
L
L
COMMAND/ACTION
DESELECT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
Any Command Otherwise Allowed to Bank m
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
NOTES
X
H
X
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
X
H
X
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
Idle
Row
Activating,
Active, or
Precharging
Read
(Auto-
Precharge
Disabled)
Write
(Auto-
Precharge
Disabled)
Read
(With Auto-
Precharge)
7
7
7
7, 9
7, 8
7
7, 3a
7, 9, 3a
Write
(With Auto-
Precharge)
7, 3a
7, 3a
NOTE:
1. This table applies when CKE
n-1
was HIGH and CKE
n
is HIGH (see Truth Table 2) and after
t
XSNR has been
met (if the previous state was self refresh).
2. This table describes alternate bank operation, except where noted (i.e., the current state is for bank
n
and
the commands shown are those allowed to be issued to bank
m,
assuming that bank
m
is in such a state that the
given command is allowable). Exceptions are covered in the notes below.
(Notes continued on next page)
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|---|---|
| MT46V64M8 | 16 Meg x 8 x 4 banks DDR SDRAM(16M x 8 x 4組,雙數(shù)據(jù)速率同步動(dòng)態(tài)RAM) |
| MT48LC16M8A1TG | SYNCHRONOUS DRAM |
| MT48LC32M4A1 | ECONOLINE: RSZ/P - 1kVDC |
| MT48LC32M4A2 | SYNCHRONOUS DRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT46V64M4_1 | 制造商:MICRON 制造商全稱(chēng):Micron Technology 功能描述:Double Data Rate (DDR) SDRAM |
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