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參數(shù)資料
| 型號(hào)： | MT48LC2M32LFFC |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 512K x 32 x 4 banks 3.3v SDRAM(3.3V,512K x 32 x 4組同步動(dòng)態(tài)RAM) |
| 中文描述： | 為512k × 32 × 4銀行3.3V的內(nèi)存電壓（3.3V，512K采樣× 32 × 4組同步動(dòng)態(tài)RAM）的 |
| 文件頁數(shù)： | 12/50頁 |
| 文件大?。?/td> | 1054K |
| 代理商： | MT48LC2M32LFFC |
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12
64Mb: x32, 3.3V SDRAM
BatRam_3V.p65 – Rev. 0.7, Pub. 2/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
64Mb: x32, 3.3V
SDRAM
PRELIMINARY
OPERATION
BANK/ROW ACTIVATION
Before any READ or WRITE commands can be is-
sued to a bank within the SDRAM, a row in that bank
must be “opened.” This is accomplished via the AC-
TIVE command, which selects both the bank and the
row to be activated.
After opening a row (issuing an ACTIVE command),
a READ or WRITE command may be issued to that row,
subject to the
t
RCD specification.
t
RCD (MIN) should
be divided by the clock period and rounded up to the
next whole number to determine the earliest clock edge
after the ACTIVE command on which a READ or WRITE
command can be entered. For example, a
t
RCD specifi-
cation of 20ns with a 125 MHz clock (8ns period) results
in 2.5 clocks, rounded to 3. This is reflected in Figure 4,
which covers any case where 2 <
t
RCD (MIN)/
t
CK< 3.
(The same procedure is used to convert other specifi-
cation limits from time units to clock cycles.)
A subsequent ACTIVE command to a different row
in the same bank can only be issued after the previous
active row has been “closed” (precharged). The mini-
mum time interval between successive ACTIVE com-
mands to the same bank is defined by
t
RC.
A subsequent ACTIVE command to another bank
can be issued while the first bank is being accessed,
which results in a reduction of total row-access over-
head. The minimum time interval between successive
ACTIVE commands to different banks is defined by
t
RRD.
CS#
WE#
CAS#
RAS#
CKE
CLK
A0–A10
ROW
ADDRESS
HIGH
BA0, BA1
BANK
ADDRESS
Figure 4
Example: Meeting
t
RCD (MIN) When 2 <
t
RCD (MIN)/
t
CK < 3
Figure 3
Activating A Specific Row In A
Specific Bank
CLK
T2
T1
T3
T0
t
COMMAND
NOP
ACTIVE
READ or
WRITE
T4
NOP
RCD
DON’T CARE
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