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參數(shù)資料
| 型號(hào)： | MT48LC2M32LFFC |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 512K x 32 x 4 banks 3.3v SDRAM(3.3V,512K x 32 x 4組同步動(dòng)態(tài)RAM) |
| 中文描述： | 為512k × 32 × 4銀行3.3V的內(nèi)存電壓（3.3V，512K采樣× 32 × 4組同步動(dòng)態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 30/50頁(yè) |
| 文件大?。?/td> | 1054K |
| 代理商： | MT48LC2M32LFFC |
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30
64Mb: x32, 3.3V SDRAM
BatRam_3V.p65 – Rev. 0.7, Pub. 2/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
64Mb: x32, 3.3V
SDRAM
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
, V
DD
Q Supply
Relative to V
SS
................................................ -1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to V
SS
................................................ -1V to +4.6V
Voltage on Output Pins
Relative to V
SS
.................................. --0.5V to V
DD
Q+0.5V
Operating Temperature, T
A......................................
0oC to +70oC
Storage Temperature (plastic) ........... -55oC to +150oC
Power Dissipation ........................................................ 1W
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 6; notes appear on page 34) V
DD
, V
DD
Q = +3.3V ±0.3V
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V
￡
V
IN
￡
V
DD
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQs are disabled; 0V
￡
V
OUT
￡
V
DD
Q
OUTPUT LEVELS:
Output High Voltage (I
OUT
= -2mA)
Output Low Voltage (I
OUT
= 2mA)
SYMBOL
V
DD
, V
DD
Q
V
IH
V
IL
MIN
3
2
-0.3
MAX
3.6
V
DD
+ 0.3
0.8
UNITS NOTES
V
V
V
23
23
I
I
-5
5
μA
I
OZ
V
OH
-5
2.4
5
–
μA
V
V
OL
–
0.4
V
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