參數(shù)資料
型號(hào): MT48V8M16LFF4-10XT
元件分類: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
封裝: 8 X 8 MM, VFBGA-54
文件頁(yè)數(shù): 16/69頁(yè)
文件大?。?/td> 6213K
代理商: MT48V8M16LFF4-10XT
128Mb: x16, x32
MOBILE SDRAM
09005aef8071a76b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mbx16x32Mobile_2.fm - Rev. G (DRAFT) 7/04 EN
23
2001 Micron Technology, Inc. All rights reserved.
Figure 15: Random READ Accesses
CLK
DQ
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
BANK,
COL n
DON’T CARE
DOUT
n
DOUT
a
DOUT
x
DOUT
m
READ
NOTES:
1) Each READ command may be to either bank. DQM is LOW.
READ
NOP
BANK,
COL a
BANK,
COL x
BANK,
COL m
CLK
DQ
DOUT
n
T2
T1
T4
T3
T5
T0
COMMAND
ADDRESS
READ
NOP
BANK,
COL n
DOUT
a
DOUT
x
DOUT
m
READ
NOP
BANK,
COL a
BANK,
COL x
BANK,
COL m
CLK
DQ
DOUT
n
T2
T1
T4
T3
T0
COMMAND
ADDRESS
READ
NOP
BANK,
COL n
DOUT
a
DOUT
x
DOUT
m
READREADREAD
BANK,
COL a
BANK,
COL x
BANK,
COL m
CAS Latency = 1
CAS Latency = 2
CAS Latency = 3
TRANSITIONING DATA
2) Burst Length = 1, 2, 4, 8 or full page (if BL > 1 the following READ interrupts the previous)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT48V8M16LFF4-8 XT 制造商:Micron Technology Inc 功能描述: