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參數(shù)資料
| 型號： | MT58L128L36D1T-5IT |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 128K X 36 STANDARD SRAM, 2.8 ns, PQFP100 |
| 封裝： | PLASTIC, MS-026BHA, TQFP-100 |
| 文件頁數(shù)： | 13/23頁 |
| 文件大?。?/td> | 604K |
| 代理商： | MT58L128L36D1T-5IT |
20
4Mb: 256K x 18, 128K x 32/36 3.3V I/O Pipelined, DCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L256L18D1.p65 – Rev 12/99
1999, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
3.3V I/O PIPELINED, DCD SYNCBURST SRAM
PRELIMINARY
WRITE TIMING
tKC
tKL
CLK
ADSP#
tADSH
tADSS
ADDRESS
tKH
OE#
ADSC#
CE#
(NOTE 2)
tAH
tAS
A1
tCEH
tCES
BWE#,
BWa#-BWd#
Q
High-Z
ADV#
BURST READ
BURST WRITE
D(A2)
D(A2 + 1)
D(A3)
D(A3 + 1)
D(A3 + 2)
D(A2 + 3)
A2
A3
D
Extended BURST WRITE
D(A2 + 2)
Single WRITE
tADSH
tADSS
tADSH
tADSS
tOEHZ
tAAH
tAAS
tWH
tWS
tDH
tDS
(NOTE 3)
(NOTE 1)
(NOTE 4)
GW#
tWH
tWS
(NOTE 5)
Byte write signals are ignored for first cycle when
ADSP# initiates burst.
ADSC# extends burst.
ADV# suspends burst.
DON’T CARE
UNDEFINED
D(A1)
NOTE: 1. D(A2) refers to input for address A2. D(A2 + 1) refers to input for the next internal burst address following A2.
2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When
CE# is HIGH, CE2# is HIGH and CE2 is LOW.
3. OE# must be HIGH before the input data setup and held HIGH throughout the data hold time. This prevents input/
output data contention for the time period prior to the byte write enable inputs being sampled.
4. ADV# must be HIGH to permit a WRITE to the loaded address.
5. Full-width WRITE can be initiated by GW# LOW; or by GW# HIGH, BWE# LOW and BWa#-BWb# LOW for x18 device;
or GW# HIGH, BWE# LOW and BWa#-BWd# LOW for x32 and x36 devices.
-5
-6
-7.5
-10
SYMBOL
MIN MAX MIN MAX MIN MAX MIN MAX UNITS
tDS
1.3
1.5
2.0
ns
tCES
1.3
1.5
2.0
ns
tAH
0.5
ns
tADSH
0.5
ns
tAAH
0.5
ns
tWH
0.5
ns
tDH
0.5
ns
tCEH
0.5
ns
WRITE TIMING PARAMETERS
-5
-6
-7.5
-10
SYMBOL
MIN MAX MIN MAX MIN MAX MIN MAX UNITS
tKC
5
6.0
7.5
10
ns
fKF
200
166
133
100
MHz
tKH
2
2.3
2.5
3.0
ns
tKL
2
2.3
2.5
3.0
ns
tOEHZ
2.8
3.5
4.2
4.5
ns
tAS
1.3
1.5
2.0
ns
tADSS
1.3
1.5
2.0
ns
tAAS
1.3
1.5
2.0
ns
tWS
1.3
1.5
2.0
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT58L128V36P1B-4 | 128K X 36 STANDARD SRAM, 2.3 ns, PBGA119 |
| MT58L32L36PT-7.5 | 32K X 36 CACHE SRAM, 4.2 ns, PQFP100 |
| MT58L512L18DS-7.5IT | 512K X 18 CACHE SRAM, 4 ns, PQFP100 |
| MT58L512L18DT-10IT | 512K X 18 CACHE SRAM, 5 ns, PQFP100 |
| MT58L512L18PB-6IT | 512K X 18 STANDARD SRAM, 3.5 ns, PBGA119 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L128L36F1 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L128L36F1T-10 | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Quad 3.3V 4M-Bit 128K x 36 10ns 100-Pin TQFP 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L128L36F1T-10 TR | 制造商:Cypress Semiconductor 功能描述:128KX36 SRAM PLASTIC TQFP 3.3V |
| MT58L128L36F1T-8.5 | 制造商:Cypress Semiconductor 功能描述:128KX36 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L128L36F1T-8.5C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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