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參數(shù)資料
| 型號： | MT58L512L18DT-10IT |
| 元件分類： | SRAM |
| 英文描述： | 512K X 18 CACHE SRAM, 5 ns, PQFP100 |
| 封裝： | PLASTIC, MS-026BHA, TQFP-100 |
| 文件頁數(shù)： | 14/31頁 |
| 文件大小： | 613K |
| 代理商： | MT58L512L18DT-10IT |
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8Mb: 512K x 18, 256K x 32/36 3.3V I/O, Pipelined, DCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L512L18D_C.p65 – Rev. 6/01
2001, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
NOTE: 1. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and
greater output loading.
2. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
device is active (not in power-down mode).
3. Typical values are measured at 3.3V, 25°C and 10ns cycle time.
4. This parameter is sampled.
IDD OPERATING CONDITIONS AND MAXIMUM LIMITS
(0°C
≤ T
A ≤ 70°C; VDD, VDDQ = +3.3V +0.3V/-0.165V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYMBOL
TYP
-6
-7.5
-10
UNITS NOTES
Power Supply
Device selected; All inputs
≤ VIL
Current:
or
≥ VIH; Cycle time ≥ tKC (MIN);
IDD
225
475
375
300
mA
1, 2, 3
Operating
VDD = MAX; Outputs open
Power Supply
Device selected; VDD = MAX;
Current: Idle
ADSC#, ADSP#, GW#, BWx#, ADV#
≥
IDD1
55
110
90
85
mA
1, 2, 3
VIH; All inputs
≤ VSS + 0.2 or ≥ VDD - 0.2;
Cycle time
≥ tKC (MIN)
CMOS Standby
Device deselected; VDD = MAX;
All inputs
≤ VSS + 0.2 or ≥ VDD - 0.2;
ISB2
0.4
10
mA
2, 3
All inputs static; CLK frequency = 0
TTL Standby
Device deselected; VDD = MAX;
All inputs
≤ VIL or ≥ VIH;ISB3
8
252525
mA
2, 3
All inputs static; CLK frequency = 0
Clock Running
Device deselected; VDD = MAX;
ADSC#, ADSP#, GW#, BWx#, ADV#
≥
ISB4
55
110
90
85
mA
2, 3
VIH; All inputs
≤ VSS + 0.2 or ≥ VDD - 0.2;
Cycle time
≥ tKC (MIN)
MAX
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L512L18DT-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L512L18F | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L512L18FF-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L512L18FF-10IT | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L512L18FF-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
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