參數(shù)資料
型號: MT58L512L18DT-10IT
元件分類: SRAM
英文描述: 512K X 18 CACHE SRAM, 5 ns, PQFP100
封裝: PLASTIC, MS-026BHA, TQFP-100
文件頁數(shù): 20/31頁
文件大小: 613K
代理商: MT58L512L18DT-10IT
27
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, Pipelined, DCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L512L18D_C.p65 – Rev. 6/01
2001, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
READ/WRITE TIMING 3
tKC
tKL
CLK
ADSP#
tADSH
tADSS
ADDRESS
tKH
OE#
ADSC#
CE#
(NOTE 2)
tAH
tAS
A2
tCEH
tCES
Q
High-Z
ADV#
Single WRITE
D(A3)
A4
A5
A6
D(A5)
D(A6)
D
BURST READ
Back-to-Back READs
High-Z
Q(A2)
Q(A1)
Q(A4)
Q(A4+1)
Q(A4+2)
tWH
tWS
Q(A4+3)
tOEHZ
tDH
tDS
tOELZ
(NOTE 5)
tKQLZ
tKQ
Back-to-Back
WRITEs
A1
BWE#,
BWa#-BWd#
(NOTE 4)
A3
DON’T CARE
UNDEFINED
NOTE: 1. Q(A4) refers to output from address A4. Q(A4 + 1) refers to output from the next internal burst address following A4.
2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When
CE# is HIGH, CE2# is HIGH and CE2 is LOW.
3. The data bus (Q) remains in High-Z following a WRITE cycle unless an ADSP#, ADSC# or ADV# cycle is performed.
4. GW# is HIGH.
5. Back-to-back READs may be controlled by either ADSP# or ADSC#.
-6
-7.5
-10
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
tADSS
1.5
2.0
ns
tWS
1.5
2.0
ns
tDS
1.5
2.0
ns
tCES
1.5
2.0
ns
tAH
0.5
ns
tADSH
0.5
ns
tWH
0.5
ns
tDH
0.5
ns
tCEH
0.5
ns
READ/WRITE TIMING PARAMETERS
-6
-7.5
-10
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
tKC
6.0
7.5
10
ns
fKF
166
133
100
MHz
tKH
2.3
2.5
3.0
ns
tKL
2.3
2.5
3.0
ns
tKQ
3.5
4.0
5.0
ns
tKQLZ
0
1.5
ns
tOELZ
0
ns
tOEHZ
3.5
4.2
4.5
ns
tAS
1.5
2.0
ns
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