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參數(shù)資料
| 型號： | PH28F640L18T85 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | StrataFlash Wireless Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 85 ns, PBGA56 |
| 封裝： | 0.75 MM PITCH, LEAD FREE, VFBGA-56 |
| 文件頁數(shù)： | 21/106頁 |
| 文件大?。?/td> | 1272K |
| 代理商： | PH28F640L18T85 |
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Intel StrataFlash Wireless Memory (L18)
Datasheet
Intel StrataFlash Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
21
4.2.2
128/0 and 256/0 SCSP Package Signal Descriptions
Table 2
describes the active signals used on the 128/0 and 256/0 SCSP.
Table 2.
Device Signal Descriptions for SCSP (Sheet 1 of 2)
Symbol
Type
Description
A[Max:0]
Input
ADDRESS INPUTS:
Inputs for all die addresses during read and write operations.
128-Mbit Die: A[Max] = A22
256-Mbit Die: A[Max] = A23
DQ[15:0]
Input/
Output
DATA INPUTS/OUTPUTS:
Inputs data and commands during write cycles, outputs data during read
cycles. Data signals float when the device or its outputs are deselected. Data is internally latched
during writes.
F1-CE#
F2-CE#
F3-CE#
Input
FLASH CHIP ENABLE:
Low-true: selects the associated flash memory die. When asserted, flash
internal control logic, input buffers, decoders, and sense amplifiers are active. When deasserted, the
associated flash die is deselected, power is reduced to standby levels, data and WAIT outputs are
placed in high-Z state.
F1-CE# selects the flash die.
F2-CE# and F3-CE# are available on stacked combinations with two or three flash dies else they are
RFU. They each can be tied high to VCCQ through a 10K-ohm resistor for future design flexibility.
S-CS1#
S-CS2
Input
SRAM CHIP SELECTS:
When both SRAM chip selects are asserted, SRAM internal control logic,
input buffers, decoders, and sense amplifiers are active. When either/both SRAM chip selects are
deasserted (S-CS1# = V
IH
or S-CS2 = V
IL
), the SRAM is deselected and its power is reduced to
standby levels.
Treat this signal as NC (No Connect) for this device.
P-CS#
Input
PSRAM CHIP SELECT:
Low-true; when asserted, PSRAM internal control logic, input buffers,
decoders, and sense amplifiers are active. When deasserted, the PSRAM is deselected and its power
is reduced to standby levels.
Treat this signal as NC (No Connect) for this device.
F1-OE#
F2-OE#
Input
FLASH OUTPUT ENABLE:
Low-true; enables the flash output buffers. OE#-high disables the flash
output buffers, and places the flash outputs in High-Z.
F1-OE# controls the outputs of the flash die.
F2-OE# is available on stacked combinations with two or three flash dies else it is RFU. It can be
pulled high to VCCQ through a 10K-ohm resistor for future design flexibility.
R-OE#
Input
RAM OUTPUT ENABLE:
Low-true; R-OE#-low enables the selected RAM output buffers. R-OE#-high
disables the RAM output buffers, and places the selected RAM outputs in High-Z.
Treat this signal as NC (No Connect) for this device.
WE#
Input
FLASH WRITE ENABLE:
Low-true; WE# controls writes to the selected flash die. Address and data
are latched on the rising edge of WE#.
R-WE#
Input
RAM WRITE ENABLE:
Low-true; R-WE# controls writes to the selected RAM die.
Treat this signal as NC (No Connect) for this device.
CLK
Input
FLASH CLOCK:
Synchronizes the device with the system’s bus frequency in synchronous-read mode
and increments the internal address generator. During synchronous read operations, addresses are
latched on the rising edge of ADV#, or on the next valid CLK edge with ADV# low, whichever occurs
first.
WAIT
Output
FLASH WAIT:
Indicates data valid in synchronous array or non-array burst reads. Configuration
Register bit 10 (RCR[10], WT) determines its polarity when asserted. With CE# and OE# at V
,
WAIT’s active output is V
OL
or V
OH
when CE# and OE# are asserted. WAIT is high-Z if CE# or OE# is
V
IH
.
In synchronous array or non-array read modes, WAIT indicates invalid data when asserted and
valid data when deasserted.
In asynchronous page mode, and all write modes, WAIT is deasserted.
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