參數(shù)資料
型號: PH28F640L18T85
廠商: INTEL CORP
元件分類: PROM
英文描述: StrataFlash Wireless Memory
中文描述: 4M X 16 FLASH 1.8V PROM, 85 ns, PBGA56
封裝: 0.75 MM PITCH, LEAD FREE, VFBGA-56
文件頁數(shù): 62/106頁
文件大?。?/td> 1272K
代理商: PH28F640L18T85
Intel StrataFlash Wireless Memory (L18)
April 2005
62
Intel StrataFlash Wireless Memory (L18)
Order Number: 251902, Revision: 009
Datasheet
Data words from the write buffer are directed to sequential memory locations in the flash memory
array; programming continues from where the previous buffer sequence ended. The host
programming system must poll SR[0] to determine when the buffer program sequence completes.
SR[0] cleared indicates that all buffer data has been transferred to the flash array; SR[0] set
indicates that the buffer is not available yet for the next fill cycle. The host system may check full
status for errors at any time, but it is only necessary on a block basis after Buffered EFP exit. After
the buffer fill cycle, no write cycles should be issued to the device until SR[0] = 0 and the device is
ready for the next buffer fill.
Note:
Any spurious writes are ignored after a buffer fill operation and when internal program is
proceeding.
The host programming system continues the Buffered EFP algorithm by providing the next group
of data words to be written to the buffer. Alternatively, it can terminate this phase by changing the
block address to one outside of the current block’s range.
The Program/Verify phase concludes when the programmer writes to a different block address;
data supplied must be 0xFFFF. Upon Program/Verify phase completion, the device enters the
Buffered EFP Exit phase.
11.3.4
Buffered EFP Exit Phase
When SR[7] is set, the device has returned to normal operating conditions. A full status check
should be performed on the partition being programmed at this time to ensure the entire block
programmed successfully. When exiting the Buffered EFP algorithm with a block address change,
the read mode of both the programmed and the addressed partition will not change. After Buffered
EFP exit, any valid command can be issued to the device.
11.4
Program Suspend
Issuing the Program Suspend command while programming suspends the programming operation.
This allows data to be accessed from memory locations other than the one being programmed. The
Program Suspend command can be issued to any device address; the corresponding partition is not
affected. A program operation can be suspended to perform reads only. Additionally, a program
operation that is running during an erase suspend can be suspended to perform a read operation
(see
Figure 40, “Program Suspend/Resume Flowchart” on page 86
).
When a programming operation is executing, issuing the Program Suspend command requests the
WSM to suspend the programming algorithm at predetermined points. The partition that is
suspended continues to output Status Register data after the Program Suspend command is issued.
Programming is suspended when Status Register bits SR[7,2] are set. Suspend latency is specified
in
Section 7.7, “Program and Erase Characteristics” on page 41
.
To read data from blocks within the suspended partition, the Read Array command must be issued
to that partition. Read Array, Read Status Register, Read Device Identifier, CFI Query, and
Program Resume are valid commands during a program suspend.
A program operation does not need to be suspended in order to read data from a block in another
partition that is not programming. If the other partition is already in a Read Array, Read Device
Identifier, or CFI Query state, issuing a valid address returns corresponding read data. If the other
partition is not in a read mode, one of the read commands must be issued to the partition before
data can be read.
相關(guān)PDF資料
PDF描述
PH2907A PNP switching transistor
PH2907 PNP switching transistor
PH2931-135S Rail-to-Rail, Very Low Noise Universal Dual Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: -40°C to +85°C
PH2931-I3 Radar Pulsed Power Transistor, 135W, 20ms Pulse, 1% Duty 2.9 - 3.1 GHz
PH2931-20M Radar Pulsed Power Transistor, 20W,100ms Pulse, 10% Duty 2.9-3.1 GHz
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PH28F640W18BD60 制造商:Micron Technology Inc 功能描述:PH28F640W18BD60S L785
PH28F640W18BD60B 制造商:Micron Technology Inc 功能描述:NUMPH28F640W18BD60B PH28F640W18BD60S L78
PH28F640W18TE60B 制造商:Micron Technology Inc 功能描述:64MB, CRYSTAL .75 VFBGA 1.8 LF - Tape and Reel
PH28F640W30BD70A 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel/Serial 1.8V 64Mbit 4M x 16bit 70ns 56-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:NUMPH28F640W30BD70A MM#862859FLASH 28F64
PH2-8-SGA 制造商:Adam Technologies Inc 功能描述:PH2 Series Dual Row 8 Position Straight 2.54 mm Centerline Pin Header