參數(shù)資料
型號(hào): PHB55N03T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS transistor Standard level FET
中文描述: 55 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC PACKAGE-3
文件頁(yè)數(shù): 11/11頁(yè)
文件大?。?/td> 117K
代理商: PHB55N03T
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHP55N04LT, PHB55N04LT
PHD55N04LT
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
January 2001
11
Rev 1.000
相關(guān)PDF資料
PDF描述
PHD6N10E PowerMOS transistor
PHD71NQ03LT Triple 1.8V to 6V High-Side MOSFET Drivers; Package: SO; No of Pins: 8; Temperature Range: 0°C to +70°C
PHP71NQ03LT TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-220AB
PHB71NQ03LT Rail-to-Rail Input Rail-to-Rail Output Zero-Drift Op Amp; Package: SO; No of Pins: 8; Temperature Range: -40°C to +85°C
PHE13002AU Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHB55N03TT/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 55A I(D) | SOT-404
PHB55N04LT 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 35V V(BR)DSS | 55A I(D) | TO-263AB
PHB5N40T/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 7.2A I(D) | SOT-404
PHB-5R0H155-R 功能描述:超級(jí)電容/超級(jí)電容器 CAP,1.5F,5.0V,EDLC PHB SERIES HORZ RoHS:否 制造商:Murata 電容:350 mF 容差: 電壓額定值:4.2 V ESR:60 mOhms 工作溫度范圍:- 30 C to + 70 C 端接類型:SMD/SMT 引線間隔: 尺寸:18.5 mm W x 20.5 mm L x 3 mm H
PHB-5R0H255-R 功能描述:超級(jí)電容/超級(jí)電容器 CAP,2.5F,5.0V,EDLC PHB SERIES HORZ RoHS:否 制造商:Murata 電容:350 mF 容差: 電壓額定值:4.2 V ESR:60 mOhms 工作溫度范圍:- 30 C to + 70 C 端接類型:SMD/SMT 引線間隔: 尺寸:18.5 mm W x 20.5 mm L x 3 mm H