參數(shù)資料
型號： PHE83N03LT
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS transistor
中文描述： 75 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, TO-220AB, I2PAK-3
文件頁數(shù)： 2/15頁
文件大小： 308K
代理商： PHE83N03LT
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
Product specification
Rev. 01 — 23 January 2001
2 of 15
9397 750 07815
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
T
j
= 25 to 175
°
C
T
mb
= 25
°
C; V
GS
= 5 V
T
mb
= 25
°
C
Typ
6.5
10
Max
25
75
115
175
9
12
Unit
V
A
W
°
C
m
m
V
GS
= 10 V; I
D
= 25 A; T
j
= 25
°
C
V
GS
= 5 V; I
D
= 25 A; T
j
= 25
°
C
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
V
GSM
gate-source voltage
Limiting values
Conditions
T
j
= 25 to 175
°
C
T
j
= 25 to 175
°
C; R
GS
= 20 k
Min
Max
25
25
±
15
±
20
Unit
V
V
V
V
t
p
≤
50
μ
s; pulsed;
duty cycle 25%; T
j
≤
150
°
C
T
mb
= 25
°
C; V
GS
= 5 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 5 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
D
drain current (DC)
55
55
75
61
240
115
+175
+175
A
A
A
W
°
C
°
C
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
AS
non-repetitive avalanche energy
peak drain current
total power dissipation
storage temperature
operating junction temperature
T
mb
= 25
°
C
75
240
A
A
unclamped inductive load;
I
D
= 75 A; t
p
= 0.1 ms; V
DD
= 15 V;
R
GS
= 50
; V
GS
= 5V; starting T
j
= 25
°
C
unclamped inductive load;
V
DD
= 15 V; R
GS
= 50
; V
GS
= 5 V;
starting T
j
= 25
°
C
120
mJ
I
AS
non-repetitive avalanche current
75
A
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