參數(shù)資料
型號: PHE83N03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS transistor
中文描述: 75 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, TO-220AB, I2PAK-3
文件頁數(shù): 7/15頁
文件大?。?/td> 308K
代理商: PHE83N03LT
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
Product specification
Rev. 01 — 23 January 2001
7 of 15
9397 750 07815
Philips Electronics N.V. 2001. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C; V
DS
= 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
×
R
DSon
Fig 11. Forward transconductance as a function of
drain current; typical values.
V
GS
= 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
Tj (oC)
180
max
typ
min
VGS(th)
(V)
03aa36
0
0.5
1
1.5
2
2.5
3
max
typ
min
ID
VGS (V)
10-6
10-5
10-4
10-3
10-2
10-1
(A)
03ad90
0
15
30
45
60
75
90
g
fs
(S)
0
15
30
45
60
75
I
D
(A)
T
j
= 25 oC
175 oC
V
DS
> I
D
x R
DSon
03ad92
102
103
104
C
iss
,
C
oss
,
C
rss
(pF)
10-1
1
10
102
V
DS
(V)
C
iss
C
oss
C
rss
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