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參數(shù)資料
| 型號(hào)： | PHN70308/T3 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 5000 mA, 25 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AH |
| 封裝： | PLASTIC, SSOP-28 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 132K |
| 代理商： | PHN70308/T3 |
Philips Semiconductors
Product specification
N-channel enhancement mode
PHN70308
TrenchMOS transistor array
FEATURES
SYMBOL
QUICK REFERENCE DATA
30 m
isolation transistor
80 m
spindle transistors
V
DS = 25 V
TrenchMOS technology
Logic level compatible
I
D = 5 A
Surface mount package
R
DS(ON) ≤ 30 m
(V
GS = 10 V; isolation FET)
R
DS(ON) ≤ 80 m
(V
GS = 10 V; spindle FETs)
GENERAL DESCRIPTION
This product is used to drive high performance, three phase brushless d.c. motors in computer disk drives.
The PHN70308 contains seven, n-channel enhancement mode trenchMOS transistors in a surface mounting plastic
package. Six of the transistors can be configured as a three phase bridge to drive the spindle of a disk drive motor.
The remaining transistor delivers power to the three phase bridge during normal operation. In the event of a power
failure occurring whilst the motor is still spinning, this transistor isolates the computer power supply from the back
emf generated by the motor.
The PHN70308 is supplied in the surface mounting SOT341-1 (SSOP28) package.
PINNING
SOT341-1 (SSOP28)
PIN
DESCRIPTION PIN
DESCRIPTION
1,3
drain 1
16,17
source 4
2
source 1
18
gate 4
4
gate 1
20
gate 5
5,7
drain 2
21
source 5
6
source 2
23
gate 6
8
gate 2
24
source 6
9,11
drain 3
26
gate 7
10
source 3
27
source 7
12
gate 3
13-15,19,22,25,28
drain 4
D4
D1
D2
D3
S2
S3
G1
G2
G3
G6
G7
G5
G4
S7
S6
S5
S4
isolation FET
1
14
15
28
Top view
May 1999
1
Rev 1.000
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