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參數(shù)資料
| 型號： | PHN70308/T3 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 5000 mA, 25 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AH |
| 封裝： | PLASTIC, SSOP-28 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 132K |
| 代理商： | PHN70308/T3 |
Philips Semiconductors
Product specification
N-channel enhancement mode
PHN70308
TrenchMOS transistor array
ELECTRICAL CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 10 A25
-
V
voltage
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1.0
1.5
-
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 4 A
resistance
spindle FET
-
60
80
m
isolation FET
-
27
30
m
R
DS(ON)
Drain-source on-state
V
GS = 4.5 V; ID = 2 A
resistance
spindle FET
-
95
150
m
isolation FET
-
38
60
m
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 4 A; Tj = 150C
resistance
spindle FET
-
102
136
m
isolation FET
-
46
51
m
I
GSS
Gate source leakage current V
GS = ±20 V; VDS = 0 V
-
10
100
nA
I
DSS
Zero gate voltage drain
V
DS = 20 V; VGS = 0 V;
-
10
100
nA
current
T
j = 150C
-
0.1
0.5
mA
Q
g(tot)
Total gate charge
I
D = 1 A; VDD = 20 V; VGS = 10 V
spindle FET
-
5.4
-
nC
isolation FET
-
17.6
-
nC
Q
gs
Gate-source charge
spindle FET
-
0.4
-
nC
isolation FET
-
1.4
-
nC
Q
gd
Gate-drain (Miller) charge
spindle FET
-
1.6
-
nC
isolation FET
-
5.7
-
nC
t
on
Turn-on time
V
DD = 20 V; ID = 1 A; VGS = 10 V; RG = 6 ;
resistive load
spindle FET
-
5.5
10
ns
isolation FET
-
11
20
ns
t
off
Turn-off time
spindle FET
-
16
25
ns
isolation FET
-
45
60
ns
C
iss
Input capacitance
V
GS = 0 V; VDS = 20 V; f = 1 MHz
spindle FET
-
180
-
pF
isolation FET
-
546
-
pF
C
oss
Output capacitance
spindle FET
-
70
-
pF
isolation FET
-
311
-
pF
C
rss
Feedback capacitance
spindle FET
-
36
-
pF
isolation FET
-
133
-
pF
May 1999
3
Rev 1.000
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