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參數(shù)資料
| 型號(hào)： | PHN70308/T3 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 5000 mA, 25 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AH |
| 封裝： | PLASTIC, SSOP-28 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 132K |
| 代理商： | PHN70308/T3 |
Philips Semiconductors
Product specification
N-channel enhancement mode
PHN70308
TrenchMOS transistor array
Fig.5. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C
Fig.6. Safe operating area (spindle FET) T
sp = 25C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.7. Safe operating area (isolation FET) T
sp = 25C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.8. Transient thermal impedance (spindle FET).
Z
th j-sp = f(t); parameter D = tp/T
Fig.9. Transient thermal impedance (isolation FET).
Z
th j-sp = f(t); parameter D = tp/T
Fig.10. Typical output characteristics (spindle FET)
T
j = 25 C; ID = f(VDS); parameter VGS
Drain current, ID (A)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
0.5
1
1.5
2
2.5
3
Gate-source voltage, VGS (V)
minimum
typical
VDS = 5 V
0.01
0.1
1
10
100
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
Pulse width, tp (s)
Transient thermal impedance, Zth j-a (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
0.1
1
10
100
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
D.C.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100 us
0.01
0.1
1
10
100
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
Pulse width, tp (s)
Transient thermal impedance, Zth j-a (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
0.1
1
10
100
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
D.C.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 100 us
0
1
2
3
4
5
6
7
8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
2.6 V
2.8 V
Tj = 25 C
VGS = 10 V
3 V
3.2 V
4.5 V
3.4 V
3.6 V
May 1999
5
Rev 1.000
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