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參數(shù)資料
| 型號： | PHP55N04LT |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 35V V(BR)DSS | 55A I(D) | TO-220AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 35V的五（巴西）直| 55A條（?。﹟ TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 117K |
| 代理商： | PHP55N04LT |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHP55N04LT, PHB55N04LT
PHD55N04LT
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Drain current, ID (A)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
0.5
1
1.5
2
2.5
3
Gate-source voltage, VGS (V)
minimum
typical
maximum
VDS = 5 V
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
5
10
15
20
25
30
35
40
45
50
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 55A
Tj = 25 C
VDD = 15 V
100
1000
10000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
0
5
10
15
20
25
30
35
40
45
50
0
0.1
0.2
0.3
0.4
0.5
Source-Drain Voltage, VSDS (V)
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 V
January 2001
5
Rev 1.000
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