參數(shù)資料
型號: PSD813F5V
英文描述: -60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA9064 with optional Total Dose Rating of 300kRads
中文描述: Flash在系統(tǒng)編程(ISP)外設的8位微控制器
文件頁數(shù): 89/103頁
文件大小: 1185K
代理商: PSD813F5V
89/103
PSD81XFX, PSD83XF2, PSD85XF2
Table 58. Program, WRITE and Erase Times (5V devices)
Symbol
Note: 1. Programmed to all zero before erase.
2. The polling status, DQ7, is valid tQ7VQV time units before the data byte, DQ0-DQ7, is valid for reading.
Table 59. Program, WRITE and Erase Times (3V devices)
Symbol
Note: 1. Programmed to all zero before erase.
2. The polling status, DQ7, is valid tQ7VQV time units before the data byte, DQ0-DQ7, is valid for reading.
Parameter
Min.
Typ.
Max.
Unit
Flash Program
8.5
s
Flash Bulk Erase
1
(pre-programmed)
3
30
s
Flash Bulk Erase (not pre-programmed)
5
s
t
WHQV3
Sector Erase (pre-programmed)
1
30
s
t
WHQV2
Sector Erase (not pre-programmed)
2.2
s
t
WHQV1
Byte Program
14
1200
μs
Program / Erase Cycles (per Sector)
100,000
cycles
t
WHWLO
Sector Erase Time-Out
100
μs
t
Q7VQV
DQ7 Valid to Output (DQ7-DQ0) Valid (Data Polling)
2
30
ns
Parameter
Min.
Typ.
Max.
Unit
Flash Program
8.5
s
Flash Bulk Erase
1
(pre-programmed)
3
30
s
Flash Bulk Erase (not pre-programmed)
5
s
t
WHQV3
Sector Erase (pre-programmed)
1
30
s
t
WHQV2
Sector Erase (not pre-programmed)
2.2
s
t
WHQV1
Byte Program
14
1200
μs
Program / Erase Cycles (per Sector)
100,000
cycles
t
WHWLO
Sector Erase Time-Out
100
μs
t
Q7VQV
DQ7 Valid to Output (DQ7-DQ0) Valid (Data Polling)
2
30
ns
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