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參數(shù)資料
| 型號(hào)： | PTF180601C |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz |
| 中文描述： | LDMOS的場(chǎng)效應(yīng)晶體管60瓦，DCS / PCS的兆赫波段1805至80年，1930-1990兆赫 |
| 文件頁(yè)數(shù)： | 10/11頁(yè) |
| 文件大?。?/td> | 233K |
| 代理商： | PTF180601C |
Data Sheet
10
2004-05-03
PTF180601
Package Outline Specifications
(cont.)
Package 30248
Notes: Unless otherwise specified
1.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
2.
Primary dimensions are mm. Alternate dimensions are inches.
3.
Pins: D = drain, S = source, G = gate
4.
Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
34.04
[1.340]
19.81± 0.20
[.780± .008]
1.02
[.040]
19.43 ± 0.51
[.765± .020]
(45° X 2.72
[.107])
2X 12.70
[.500]
2X 4.83± 0.51
[.190± .020]
27.94
[1.100]
4X R1.52
[.060]
2X R1.63
[.064]
D
G
S
9.78
[.385]
0.0381 [.0015]
-A-
0.51
[.020]
P K G _248_0
C
C
LID 9.40
+-0.15
[.370 ]
3.76± 0.38
[.142± .015]
SPH 1.57
[.062]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF180601E | LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz |
| PTF180901E | GSM/EDGE RF Power FET |
| PTF180901F | GSM/EDGE RF Power FET |
| PTF181301 | LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz |
| PTF181301A | LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF180601E | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz |
| PTF180901E | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:GSM/EDGE RF Power FET |
| PTF180901F | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:GSM/EDGE RF Power FET |
| PTF181301 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz |
| PTF181301A | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz |
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