參數(shù)資料
型號(hào): PTF191601
廠商: INFINEON TECHNOLOGIES AG
英文描述: LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
中文描述: LDMOS射頻功率場效應(yīng)晶體管160瓦,1930-1990兆赫
文件頁數(shù): 3/4頁
文件大小: 61K
代理商: PTF191601
Developmental Data Sheet
3 of 4
2004-03-17
Advance Information
PTF191601
Ordering Information
Type
PTF191601E
Package Outline
30260
Package Description
Thermally enhanced, flange mount
Marking
PTF191601E
Package Outline Specifications
Package 30260
Notes: Unless otherwise specified
1.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
2.
Primary dimensions are mm. Alternate dimensions are inches.
3.
Pins: D = drain, S = source, G = gate
4.
Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
0.038 [.0015] -A-
22.35± 0.23
[.880± .009]
(2X 4.83± 0.50
[.190± .020])
2X 12.70
[.500]
LID 13.21
[.520 ]
23.37± 0.51
4X R 1.52
[.060]
2X 3.25
[.128]
1.02
[.040]
+ 0.10
-0.15
+ .004
0.51
[.020]
27.94
34.04
[1.340]
D
S
G
13.72
[.540]
45° X (2.03
[.080])
SPH 1.57
[.062]
2X 1.63
[.064] R
4.11± 0.38
[.162± .015]
ERA-H-30260-2-1-2302
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PTF191601E 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz
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