參數(shù)資料
型號： S29PL032J70BAW13
廠商： SPANSION LLC
元件分類： PROM
英文描述： 2M X 16 FLASH 3V PROM, 70 ns, PBGA56
封裝： 7 X 9 MM, FBGA-56
文件頁數(shù)： 1/100頁
文件大?。?/td> 967K
代理商： S29PL032J70BAW13
Publication Number 31107
Revision A Amendment 5 Issue Date March 15, 2004
PRELIMINARY
S29PL127J/S29PL129J/S29PL064J/S29PL032J
128/128/64/32 Megabit (8/8/4/2 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Read/Write
Flash Memory with Enhanced VersatileIOTM Control
Distinctive Characteristics
ARCHITECTURAL ADVANTAGES
128/128/64/32 Mbit Page Mode devices
— Page size of 8 words: Fast page read access from
random locations within the page
Single power supply operation
— Full Voltage range: 2.7 to 3.6 volt read, erase, and
program operations for battery-powered applications
Dual Chip Enable inputs (only in PL129J)
— Two CE# inputs control selection of each half of the
memory space
Simultaneous Read/Write Operation
— Data can be continuously read from one bank while
executing erase/program functions in another bank
— Zero latency switching from write to read operations
FlexBank Architecture (PL127J/PL064J/PL032J)
— 4 separate banks, with up to two simultaneous
operations per device
—Bank A:
PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31)
PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15)
PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7)
—Bank B:
PL127J - 48 Mbit (32 Kw x 96)
PL064J - 24 Mbit (32 Kw x 48)
PL032J - 12 Mbit (32 Kw x 24)
—Bank C:
PL127J - 48 Mbit (32 Kw x 96)
PL064J - 24 Mbit (32 Kw x 48)
PL032J - 12 Mbit (32 Kw x 24)
—Bank D:
PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31)
PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15)
PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7)
FlexBank Architecture (PL129J)
— 4 separate banks, with up to two simultaneous
operations per device
— CE#1 controlled banks:
Bank 1A:
PL129J - 16Mbit (4Kw x 8 and 32Kw x 31)
Bank 1B:
PL129J - 48Mbit (32Kw x 96)
— CE#2 controlled banks:
Bank 2A:
PL129J - 48 Mbit (32Kw x 96)
Bank 2B:
PL129J - 16Mbit (4Kw x 8 and 32Kw x 31)
Enhanced VersatileI/OTM (VIO) Control
— Output voltage generated and input voltages
tolerated on all control inputs and I/Os is determined
by the voltage on the VIO pin
—VIO options at 1.8 V and 3 V I/O for PL127J and
PL129J devices
—3V VIO for PL064J and PL032J devices
SecSiTM (Secured Silicon) Sector region
— Up to 128 words accessible through a command
sequence
— Up to 64 factory-locked words
— Up to 64 customer-lockable words
Both top and bottom boot blocks in one device
Manufactured on 110 nm process technology
Data Retention: 20 years typical
Cycling Endurance: 1 million cycles per sector
typical
PERFORMANCE CHARACTERISTICS
High Performance
— Page access times as fast as 20 ns
— Random access times as fast as 55 ns
Power consumption (typical values at 10 MHz)
— 45 mA active read current
— 17 mA program/erase current
— 0.2 A typical standby mode current
SOFTWARE FEATURES
Software command-set compatible with JEDEC
42.4 standard
— Backward compatible with Am29F, Am29LV,
Am29DL, and AM29PDL families and MBM29QM/RM,
MBM29LV, MBM29DL, MBM29PDL families
CFI (Common Flash Interface) compliant
— Provides device-specific information to the system,
allowing host software to easily reconfigure for
different Flash devices
Erase Suspend / Erase Resume
— Suspends an erase operation to allow read or
program operations in other sectors of same bank
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL032J70BFI120 功能描述:閃存 32Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29PL032J70BFI120(E) 制造商:Spansion 功能描述:Cut Tape
S29PL032J70BFI122 功能描述:閃存 32Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29PL032J70BFI123 功能描述:閃存 32MB 閃存 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29PL064J 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
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