- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄192305 > S71GL064A08 (Spansion Inc.) STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM PDF資料下載
參數(shù)資料
| 型號： | S71GL064A08 |
| 廠商： | Spansion Inc. |
| 英文描述： | STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM |
| 中文描述： | 堆疊式多芯片產(chǎn)品，閃存和RAM |
| 文件頁數(shù)： | 73/134頁 |
| 文件大?。?/td> | 2383K |
| 代理商： | S71GL064A08 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁當前第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁第128頁第129頁第130頁第131頁第132頁第133頁第134頁
February 8, 2005 S71GL064A_00_A2
S71GL064A based MCPs
41
Advance
Informatio n
Autoselect Command Sequence
The autoselect command sequence allows the host system to read several identifier codes at
specific addresses:
Note: The device ID is read over three cycles. SA = Sector Address
The autoselect command sequence is initiated by first writing two unlock cycles. This is fol-
lowed by a third write cycle that contains the autoselect command. The device then enters
the autoselect mode. The system may read at any address any number of times without ini-
tiating another autoselect command sequence:
The system must write the reset command to return to the read mode (or erase-suspend-
read mode if the device was previously in Erase Suspend).
Enter Secured Silicon Sector/Exit Secured Silicon
Sector Command Sequence
The Secured Silicon Sector region provides a secured data area containing an 8-word/16-byte
random Electronic Serial Number (ESN). The system can access the Secured Silicon Sector
region by issuing the three-cycle Enter Secured Silicon Sector command sequence. The de-
vice continues to access the Secured Silicon Sector region until the system issues the four-
cycle Exit Secured Silicon Sector command sequence. The Exit Secured Silicon Sector com-
mand sequence returns the device to normal operation. Table 10 shows the address and data
requirements for both command sequences. See also “Secured Silicon Sector Flash
Memory Region” for further information. Note that the ACC function and unlock bypass modes
are not available when the Secured Silicon Sector is enabled.
Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by
writing two unlock write cycles, followed by the program set-up command. The program ad-
dress and data are written next, which in turn initiate the Embedded Program algorithm. The
system is not required to provide further controls or timings. The device automatically pro-
vides internally generated program pulses and verifies the programmed cell margin. Tables
31 and 32 show the address and data requirements for the word program command se-
quence, respectively.
When the Embedded Program algorithm is complete, the device then returns to the read
mode and addresses are no longer latched. The system can determine the status of the pro-
gram operation by using DQ7 or DQ6. Refer to the Write Operation Status section for
information on these status bits. Any commands written to the device during the Embedded
Program Algorithm are ignored. Note that the Secured Silicon Sector, autoselect, and CFI
functions are unavailable when a program operation is in progress. Note that a hardware
reset immediately terminates the program operation. The program command sequence
should be reinitiated once the device has returned to the read mode, to ensure data integrity.
Identifier Code
A7:A0
(x16)
A6:A-1
(x8)
Manufacturer ID
00h
Device ID, Cycle 1
01h
02h
Device ID, Cycle 2
0Eh
1Ch
Device ID, Cycle 3
0Fh
1Eh
Secured Silicon Sector Factory Protect
03h
06h
Sector Protect Verify
(SA)02h
(SA)04h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S71GL064A40BAI0B3 | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A40BAI0F3 | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A40BAW0F3 | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A40BFI0B3 | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL128NC0BAWAZ0 | SPECIALTY MEMORY CIRCUIT, PBGA84 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S71GL064A08-0B | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM |
| S71GL064A08-0F | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM |
| S71GL064A08BAI0B0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A08BAI0B2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A08BAI0B3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。