參數(shù)資料
型號: S71GL064A08BFI0F3
廠商: SPANSION LLC
元件分類: 存儲器
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA56
封裝: 7 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-56
文件頁數(shù): 122/134頁
文件大?。?/td> 2383K
代理商: S71GL064A08BFI0F3
86
S71GL064A based MCPs
S71GL064A_00_A2 February 8, 2005
Advance
Info rmation
Figure 26. 16Mb pSRAM Asynchronous
Asynchronous
Performance Grade
-55
-70
Density
16Mb pSRAM
3 Volt
Symbol
Parameter
Min
Max
Units
Min
Max
Units
Read
trc
Read cycle time
55
ns
70
ns
taa
Address Access
Time
55
ns
70
ns
tco
Chip select to
output
55
ns
70
ns
toe
Output enable to
valid output
30
ns
35
ns
tba
UB#, LB# Access
time
55
ns
70
ns
tlz
Chip select to
Low-z output
5ns
5
ns
tblz
UB#, LB# Enable
to Low-Z output
5ns
5
ns
tolz
Output enable to
Low-Z output
5ns
5
ns
thz
Chip enable to
High-Z output
025
ns
0
25
ns
tbhz
UB#, LB#
disable to High-Z
output
025
ns
0
25
ns
tohz
Output disable to
High-Z output
025
ns
0
25
ns
toh
Output hold from
Address Change
10
ns
10
ns
Wr
it
e
twc
Write cycle time
55
ns
70
ns
tcw
Chipselect to end
of write
50
ns
55
ns
tas
Address set up
Time
0ns
0
ns
taw
Address valid to
end of write
50
ns
55
ns
tbw
UB#, LB# valid
to end of write
50
ns
55
ns
twp
Write pulse width
50
ns
55
ns
twr
Write recovery
time
0ns
0
ns
twhz
Write to output
High-Z
25
ns
25
ns
tdw
Data to write
time overlap
25
ns
25
ns
tdh
Data hold from
write time
0ns
0
ns
tow
End write to
output Low-Z
55
tow
Write high pulse
width
xx
ns
x
ns
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