參數(shù)資料
型號(hào): S71GL064A08BFI0F3
廠商: SPANSION LLC
元件分類: 存儲(chǔ)器
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA56
封裝: 7 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-56
文件頁數(shù): 30/134頁
文件大?。?/td> 2383K
代理商: S71GL064A08BFI0F3
February 8, 2005 S71GL064A_00_A2
Type 1 SRAM
123
Advance
Informatio n
DC Characteristics
Recommended DC Operating Conditions (Note 1)
Notes:
1. TA = -40 to 85°C, unless otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width ≤20ns.
3. Undershoot: -1.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Capacitance
(f=1MHz, TA=25°C)
Note: Capacitance is sampled, not 100% tested
DC Operating Characteristics
Common
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
2.7
3.0
3.3
V
Ground
VSS
0
V
Input high voltage
VIH
2.2
-
VCC+0.2 (Note 2)
V
Input low voltage
VIL
-
0.6
V
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
8
pF
Input/Output capacitance
CIO
VIO=0V
-
10
pF
Item
Symbol
Test Conditions
Min
Typ
(Note)
Max
Unit
Input leakage current
ILI
VIN=VSS to VCC
-1
-
1
A
Output leakage current
ILO
CS1#=VIH or CS2=VIL or OE#=VIH or WE#=VIL
or LB#=UB#=VIH, VIO=Vss to VCC
-1
-
1
A
Output low voltage
VOL
IOL = 2.1mA
-
0.4
V
Output high voltage
VOH
IOH = -1.0mA
2.4
-
V
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