1. VDDD, V
參數(shù)資料
型號: SI3210PPQX-EVB
廠商: Silicon Laboratories Inc
文件頁數(shù): 35/148頁
文件大?。?/td> 0K
描述: BOARD EVALUATION FOR SI3210 MLP
標(biāo)準(zhǔn)包裝: 1
系列: ProSLIC®
主要目的: 接口,模擬前端(AFE)
已用 IC / 零件: Si3210
已供物品: 板,子卡,CD
其它名稱: 336-1169
Si3210/Si3211
Rev. 1.61
13
Not
Recommended
fo
r N
ew
D
esi
gn
s
Notes:
1. VDDD, VDDA =3.3 V.
2. VDDD, VDDA =5.25V.
3. IBAT = current from VBAT (the large negative supply). For a switched-mode power supply regulator efficiency of 71%,
the user can calculate the regulator current consumption as IBAT x VBAT/(0.71 x VDC).
Table 9. Switching Characteristics (General Inputs)1
VDDA =VDDA = 3.13 to 5.25 V, TA = 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade, CL =20pF)
Parameter
Symbol
Min
Typ
Max
Unit
Rise Time, RESET
tr
——
20
ns
RESET Pulse Width2
trl
100
ns
Notes:
1. All timing (except rise and fall time) is referenced to the 50% level of the waveform. Input test levels are
VIH =VD – 0.4 V, VIL = 0.4 V. Rise and fall times are referenced to the 20% and 80% levels of the waveform.
2. Additional initialization guidelines apply; see section 1.2 ProSLIC Initialization in AN35.
Table 10. Switching Characteristics (SPI)
VDDA =VDDA = 3.13 to 5.25 V, TA = 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade, CL =20pF
Parameter
Symbol
Test
Conditions
Min
Typ
Max
Unit
Cycle Time SCLK
tc
0.062
s
Rise Time, SCLK
tr
25
ns
Fall Time, SCLK
tf
25
ns
Delay Time, SCLK Fall to SDO Active
td1
20
ns
Delay Time, SCLK Fall to SDO
Transition
td2
20
ns
Delay Time, CS Rise to SDO Tri-state
td3
20
ns
Setup Time, CS to SCLK Fall
tsu1
25
ns
Hold Time, CS to SCLK Rise
th1
20
ns
Setup Time, SDI to SCLK Rise
tsu2
25
ns
Hold Time, SDI to SCLK Rise
th2
20
ns
Delay Time between Chip Selects
(Continuous SCLK)
tcs
440
ns
Delay Time between Chip Selects
(Non-continuous SCLK)
tcs
220
ns
Table 8. Power Supply Characteristics (Continued)
(Unless otherwise noted, VDDA, VDDD=3.13 to 5.25 V; TA=0 to 70C for F-grade, –40 to 85C for G-grade)
Parameter
Symbol
Test Condition
Typ1
Typ2
Max
Unit
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