參數(shù)資料
型號: SI3232PPT0-EVB
廠商: Silicon Laboratories Inc
文件頁數(shù): 60/128頁
文件大?。?/td> 0K
描述: BOARD EVAL W/SI3200 INTERFACE
標準包裝: 1
系列: ProSLIC®
主要目的: 接口,模擬前端(AFE)
已用 IC / 零件: Si3232
已供物品: 板,CD
Si3232
Preliminary Rev. 0.96
37
Not
Recommended
fo
r N
ew
D
esi
gn
s
4.6. Ringing Generation
The Si3232 is designed to provide a balanced ringing
waveform with or without dc offset. The ringing
frequency, cadence, waveshape, and dc offset are all
register-programmable.
Using a balanced ringing scheme, the ringing signal is
applied to both the TIP and the RING lines using ringing
waveforms that are 180° out of phase with each other.
The resulting ringing signal seen across TIP-RING is
twice the amplitude of the ringing waveform on either
the TIP or the RING line, which allows the ringing
circuitry to withstand only half the total ringing amplitude
seen across TIP-RING.
Figure 16. Balanced Ringing Waveform and
Components
The purpose of an internal ringing scheme is to provide
>40 Vrms into a 5 REN load at the terminal equipment
using a user-provided ringing battery supply. The
specific ringing supply voltage required depends on the
ringing voltage desired.
The ringing amplitude at the terminal equipment
depends on the loop impedance as well as the load
impedance in REN. The following equation can be used
to determine the TIP-RING ringing amplitude required
for a specific load and loop condition.
Figure 17. Simplified Loop Circuit During
Ringing
where
When ringing longer loop lengths, adding a dc offset
voltage is necessary to reliably detect a ring trip
condition (off-hook phone). Adding dc offset to the
ringing signal decreases the maximum possible ringing
amplitude. Adding significant dc offset also increases
the power dissipation in the Si3200 and may require
additional airflow or a modified PCB layout to maintain
acceptable
operating
temperatures.
The
Si3232
automatically applies and removes the ringing signal
during VOC-crossing periods to reduce noise and
crosstalk to adjacent lines. Table 23 provides a list of
registers required for internal ringing generation.
RING
TIP
V
RING
V
TIP
SLIC
V
OFF
GND
V
TIP
V
RING
V
BATH
V
PK
V
OV
V
CM
V
OFF
R
LOOP
V
RING
R
LOAD
V
TERM
+
R
OUT
V
TERM
V
RING
R
LOAD
R
LOAD
R
LOOP
R
OUT
++
----------------------------------------------------------------
=
R
LOOP
0.09
per foot for 26 AWG wire
=
R
OUT
320
=
R
LOAD
7000
#REN
--------------------
=
相關PDF資料
PDF描述
UPZW6101MHD CAP ALUM 100UF 420V 20% RADIAL
SI3232DC0-EVB DAUGHTER CARD W/SI3200 INTERFACE
UPZ2D391MHD CAP ALUM 390UF 200V 20% RADIAL
SI3230PPQX-EVB BOARD EVAL W/DISCRETE INTERFACE
M3UFK-1636R IDC CABLE - MKS16K/MC16M/MCF16K
相關代理商/技術參數(shù)
參數(shù)描述
SI3232PPTX-EVB 功能描述:音頻 IC 開發(fā)工具 Si3232 EVAL BOARD RoHS:否 制造商:Texas Instruments 產品:Evaluation Kits 類型:Audio Amplifiers 工具用于評估:TAS5614L 工作電源電壓:12 V to 38 V
SI3232-X-FQ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DUAL PROGRAMMABLE CMOS SLIC WITH LINE MONITORING
SI3232-X-GQ 制造商:SILABS 制造商全稱:SILABS 功能描述:DUAL PROGRAMMABLE CMOS SLIC WITH LINE MONITORING
SI3233 制造商:SILABS 制造商全稱:SILABS 功能描述:PROSLIC㈢ PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION
Si3233-C-FM 功能描述:射頻無線雜項 Single-Chan SLIC RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel