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參數資料
| 型號： | SPI80N04S2-04 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS Power-Transistor |
| 中文描述： | 的OptiMOS功率晶體管 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 269K |
| 代理商： | SPI80N04S2-04 |
2004-05-24
Page 3
SPI80N04S2-04
SPP80N04S2-04,SPB80N04S2-04
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
=80A
60
125
-
S
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
5250
1870
6980 pF
2490
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
-
420
630
V
DD
=20V,
V
GS
=10V,
I
D
=80A,
R
G
=2.2
-
16
24
ns
-
45
68
-
50
75
-
40
60
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
gs
Q
gd
Q
g
V
DD
=32V,
I
D
=80A
-
25
35
nC
-
50
75
Gate charge total
V
DD
=32V,
I
D
=80A,
V
GS
=0 to 10V
-
135
170
Gate plateau voltage
V
(plateau)
V
DD
= 32 V ,
I
D
=80A
-
5.3
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
80
A
Inv. diode direct current, pulsed
I
SM
V
SD
t
rr
Q
rr
-
-
320
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
GS
=0V,
I
F
=80A
-
0.9
1.3
V
V
R
=20V,
I
F=
l
S
,
d
i
F
/d
t
=100A/μs
-
60
75
ns
-
100
125
nC
相關PDF資料 |
PDF描述 |
|---|---|
| SPI80N04S2-H4 | OptiMOS Power-Transistor |
| SPI80N08S2-07R | OptiMOS Power-Transistor |
| SPI80N08S2-07 | OptiMOS Power-Transistor |
| SPP80N08S2-07 | OptiMOS Power-Transistor |
| SPB80N08S2-07 | OptiMOS Power-Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SPI80N04S2-H4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS Power-Transistor |
| SPI80N06S-08 | 功能描述:MOSFET MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPI80N06S08NK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-262 |
| SPI80N06S-08-TU | 功能描述:MOSFET MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPI80N06S08XK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-262 |
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