參數(shù)資料
型號(hào): SPI80N04S2-04
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS Power-Transistor
中文描述: 的OptiMOS功率晶體管
文件頁(yè)數(shù): 6/8頁(yè)
文件大?。?/td> 269K
代理商: SPI80N04S2-04
2004-05-24
Page 6
SPI80N04S2-04
SPP80N04S2-04,SPB80N04S2-04
9 Drain-source on-state resistance
R
DS(on)
=
f
(
T
j
)
parameter :
I
D
= 80 A,
V
GS
= 10 V
-60
-20
20
60
100
140
°C
T
j
200
0
1
2
3
4
5
6
7
8
9
m
11
SPP80N04S2-04
R
D
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
=
f
(
T
j)
parameter:
V
GS
=
V
DS
-60
-20
20
60
100
°C
180
T
j
0
0.5
1
1.5
2
2.5
3
V
4
V
G
250 μA
1.25 mA
11 Typ. capacitances
C
=
f
(
V
DS
)
parameter:
V
GS
=0V,
f
=1 MHz
0
5
10
15
20
V
30
V
DS
2
10
3
10
4
10
5
10
pF
C
C
iss
C
oss
C
rss
12 Forward character. of reverse diode
I
F
=
f
(V
SD
)
parameter:
T
j , t
p
= 80 μs
3
10
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
0
10
1
10
2
10
A
SPP80N04S2-04
I
F
T
j
= 25 °C typ
T
j
= 175 °C typ
T
j
= 25 °C (98%)
T
j
= 175 °C (98%)
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