參數(shù)資料
型號: TB1261F
廠商: Toshiba Corporation
英文描述: TOSHIBA BiCMOS INTEGRATED CIRCUIT, SILICON MONOLITHIC
中文描述: 東芝的BiCMOS集成電路,硅單片
文件頁數(shù): 61/66頁
文件大?。?/td> 1544K
代理商: TB1261F
TB1261F/TB1262F
2002-6-30 61 / 66
Note
D37
Items/Symbols
E-W Trapezium
Correction
/ V
TRMAX
/ V
TRMIN
Bus
onditions
Trapezium
correction:
0/31
Others: Preset
Measurement methods
(1) Set the BUS data of 'EW Trape' so as to hit the peak at the
center of the V period.
(2) Set the BUS data of Trapezium correction to 0.
(3) Measure the % of the shifts.
(4) Set the BUS data of Trapezium correction to 63.
(5) Measure the % of the shifts.
100%
MIN MAX
D38
E-W Parabolic EHT
Correction
/
Δ
V
EWP EHT
Trapezium
correction:0~31
H.EHT:7
Others: Preset
(1) Set the BUS data of Parabola correction to 0(MAX),and
change the BUS data of Trapezium correction so that the
parabola waveform at pin33(EW OUT) is symmetrical.
(2) Set the BUS data of H.EHT to 7.
(3) Supply 6V into pin28(EHT in).
(4) Measure the amplitude of waveform at pin34(EW
OUT),that is V
EHP
(6).
(5) Supply 1V into pin28(EHT in).
(6) Measure the amplitude of waveform at pin33(EW
OUT),that is V
EHP
(1).
(7)
Δ
V
EWP EHT
=(V
EHP
(6)-V
EHP
(1))/V
EHP
(6)
×
100%
V
EHP
(1)
Pin33 Waveform
V
EHP
(6)
相關(guān)PDF資料
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