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參數(shù)資料
| 型號： | TSC87251G2D-L16CED |
| 廠商： | ATMEL CORP |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | B/16-BIT MICROCONTROLLER WITH SERIAL COMMUNICATION INTERFACES |
| 中文描述： | 16-BIT, OTPROM, 16 MHz, MICROCONTROLLER, PQFP44 |
| 封裝： | 10 X 10 MM, PLASTIC, VQFP-44 |
| 文件頁數(shù)： | 15/28頁 |
| 文件大?。?/td> | 153K |
| 代理商： | TSC87251G2D-L16CED |
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Qualpack TSC87251G2D
Rev. 0 – October 1999
15
3.3.1.2 Electromigration
Characterization
Stresses of electromigration are achieved for 1000 hours on 32 packaged metal line running on flat with
a current density of 2x106 A/cm2 at a temperature of 200°C. Lines are declared to be failed for a shift of
the initial resistance by 20%. Results are summarized in the table below.
Level
Metal1
Metal2
Metal3
W/L/T(1)
2/2000/0.50
2/2000/0.50
2/2000/0.70
Structure
Ti/TiN/AlCu/TiN
Ti/TiN/AlCu/TiN
Ti/TiN/AlCu/TiN
Failures
No
No
No
(1)W/L/T=Width/Length/Thickness of the metal line in microns
Lifetime projection
The objective of reliability is to reach less than 10FIT on metal line within 10 years at a temperature of
150°C. As no failures have been found at 1000 hours in the above stress conditions a lifetime projection
in FIT is meaningless.
However, assuming for AlCu metalization an activation energy in temperature Ea of 0.60eV and an
activation in current with a power-law coefficient n of 2, the current density which guarantees no failures
within 10 years at 150°C can be extrapolated.
With these assumptions the projected current density for no failures at 150°C within 10 years is
calculated as 5x105A/cm2 which is much higher than the current density of 2x105A/cm2 specified in the
design rules.
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| TSC83251G2D-L16CED | B/16-BIT MICROCONTROLLER WITH SERIAL COMMUNICATION INTERFACES |
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相關(guān)代理商/技術(shù)參數(shù) |
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| TSC87251G2D-L16CER | 功能描述:IC MCU 8BIT 32K OTP 16MHZ 44VQFP RoHS:否 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:8x251 標(biāo)準(zhǔn)包裝:1,500 系列:AVR® ATtiny 核心處理器:AVR 芯體尺寸:8-位 速度:16MHz 連通性:I²C，LIN，SPI，UART/USART，USI 外圍設(shè)備:欠壓檢測/復(fù)位，POR，PWM，溫度傳感器，WDT 輸入/輸出數(shù):16 程序存儲器容量:8KB（4K x 16） 程序存儲器類型:閃存 EEPROM 大小:512 x 8 RAM 容量:512 x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 11x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 125°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:帶卷 (TR) |
| TSC873CT A3 | 功能描述:兩極晶體管 - BJT NPN Silicon Planar Med Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TSC873CW RPG | 功能描述:兩極晶體管 - BJT NPN Silicon Planar Med Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| TSC888AILT | 功能描述:電流靈敏放大器 Sense Amplifier 20 Gain RoHS:否 制造商:Texas Instruments 通道數(shù)量: 共模抑制比（最小值）:110 dB 輸入補償電壓:80 uV 電源電壓-最大:5.5 V 電源電壓-最小:2.7 V 電源電流:350 uA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-16 封裝:Reel |
| TSC888BILT | 功能描述:電流靈敏放大器 Sense Amplifier 50 Gain RoHS:否 制造商:Texas Instruments 通道數(shù)量: 共模抑制比（最小值）:110 dB 輸入補償電壓:80 uV 電源電壓-最大:5.5 V 電源電壓-最小:2.7 V 電源電流:350 uA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-16 封裝:Reel |
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