參數(shù)資料
型號： TSM1N60S_07
廠商： Taiwan Semiconductor Co., Ltd.
英文描述： 600V N-Channel Power MOSFET
中文描述： 600V的N溝道功率MOSFET
文件頁數(shù)： 2/6頁
文件大?。?/td> 323K
代理商： TSM1N60S_07
TSM1N60S
600V N-Channel Power MOSFET
2/6
Version: A07
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t
≤
10sec
Symbol
T
L
R
JA
Limit
10
50
Unit
S
o
C/W
Electrical Specifications
(Ta=25
o
C, unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. For design reference only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
V
GS
= 0V, I
D
= 250uA
V
GS
= 10V, I
D
= 0.3A
V
DS
= V
GS
, I
D
= 250uA
V
DS
= 600V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
50V, I
D
= 0.3A
I
S
= 1A, V
GS
= 0V
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
V
SD
600
--
2.0
--
--
--
--
--
11
--
--
--
5
--
--
13
4.0
10
± 100
--
1.5
V
Ω
V
uA
nA
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
--
--
--
--
--
--
4.5
1.1
2
155
20
3
6
--
--
V
DS
= 400V, I
D
= 1A,
V
GS
= 10V
nC
200
26
4
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
pF
t
d(on)
t
r
t
d(off)
t
f
--
--
--
--
10
20
25
24
30
50
45
60
V
GS
= 10V, I
D
= 1A,
V
DS
= 300V, R
G
= 6
Ω
nS
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