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參數資料
| 型號： | TSM1N60S_07 |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 600V N-Channel Power MOSFET |
| 中文描述： | 600V的N溝道功率MOSFET |
| 文件頁數： | 6/6頁 |
| 文件大?。?/td> | 323K |
| 代理商： | TSM1N60S_07 |
TSM1N60S
600V N-Channel Power MOSFET
6/6
Version: A07
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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相關PDF資料 |
PDF描述 |
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| TSM1N60SCT | 600V N-Channel Power MOSFET |
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| TSM1N60SCTA3 | N-Channel Power Enhancement Mode MOSFET |
| TSM1N60SCTB0 | N-Channel Power Enhancement Mode MOSFET |
| TSM2301B | 20V P-Channel MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TSM1N60SCT | 功能描述:MOSFET 600V 1A N channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM1N60SCT A3 | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo |
| TSM1N80CW | 功能描述:MOSFET 800V N Channel Pwr MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM1N80SCT | 功能描述:MOSFET 800V N Channel Pwr MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM1NB60CH C5G | 功能描述:MOSFET 600V 1A N Channel Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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