參數(shù)資料
型號(hào): UPA2680T1E
廠商: NEC Corp.
英文描述: MOSFET WITH SCHOTTKY BARRIER DIODE
中文描述: MOSFET的肖特基二極管
文件頁(yè)數(shù): 2/9頁(yè)
文件大?。?/td> 212K
代理商: UPA2680T1E
Data Sheet G17661EJ2V0DS
2
μ
PA2680T1E
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C, unless otherwise specified)
MOSFET
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Drain Current (pulse)
Note2
Total Power Dissipation
Note1
Channel Temperature
Storage Temperature
Notes 1.
Mounted on a 1 in
2
pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick FR-4 board
(Cu pad: 322 mm
2
x 70
μ
m, FR-4: 1452 mm
2
x 1.6 mmt)
2.
PW
10
μ
s, Duty Cycle
1%
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
20
±
12
±
3.0
±
12.0
1.3
150
55 to
+
150
V
V
A
A
W
°
C
°
C
Schottky Barrier Diode
Repetitive Peak Reverse Voltage
Average Forward Current
Note
Total Power Dissipation
Note
Junction Temperature
Storage Temperature
Note
Square wave,
Duty Cycle = 50%
Mounted on a 1 in
2
pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick FR-4 board
(Cu pad: 322 mm
2
x 70
μ
m, FR-4: 1452 mm
2
x 1.6 mmt)
V
RRM
I
F
P
T
T
J
T
stg
20
1.8
1.2
125
V
A
W
°
C
°
C
55 to
+
150
SBD side: 85
°
C/W when mounted on a 1 in
2
pad of 2 oz copper
FET side: 97°C/W when mounted on a 1 in
2
pad of 2 oz copper
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