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參數(shù)資料
| 型號(hào)： | UPA2680T1E |
| 廠商： | NEC Corp. |
| 英文描述： | MOSFET WITH SCHOTTKY BARRIER DIODE |
| 中文描述： | MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 212K |
| 代理商： | UPA2680T1E |
Data Sheet G17661EJ2V0DS
5
μ
PA2680T1E
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
D
0
5
10
15
0
0.2
0.4
0.6
0.8
V
GS
= 10 V
Pulsed
4.5 V
2.5 V
V
DS
- Drain to Source Voltage - V
D
0.0001
0.001
0.01
0.1
1
10
0
0.5
1
1.5
2
2.5
V
DS
= 10 V
Pulsed
T
A
= 125°C
75°C
25°C
25°C
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
G
0.5
0.7
0.9
1.1
1.3
1.5
-50
-25
0
25
50
75
100 125 150
V
DS
= V
GS
I
D
= 0.25 mA
T
ch
- Channel Temperature -
°
C
G
0.5
0.7
0.9
1.1
1.3
1.5
-50
-25
0
25
50
75
100 125 150
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
°
C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
f
0.1
1
10
0.01
0.1
1
10
V
DS
= 10 V
Pulsed
T
A
=
25°C
25°C
75°C
125°C
I
D
- Drain Current - A
D
Ω
0
20
40
60
80
100
0.01
0.1
1
10
10 V
Pulsed
4.5 V
V
GS
= 2.5 V
I
D
- Drain Current - A
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