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參數(shù)資料
| 型號： | UPA2680T1E |
| 廠商： | NEC Corp. |
| 英文描述： | MOSFET WITH SCHOTTKY BARRIER DIODE |
| 中文描述： | MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 212K |
| 代理商： | UPA2680T1E |
Data Sheet G17661EJ2V0DS
4
μ
PA2680T1E
MOSFET TYPICAL CHARACTERISTICS (T
A
= 25
°
C, unless otherwise specified)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°
C
T
0
0.25
0.5
0.75
1
1.25
1.5
0
25
50
75
100
125
150
175
Mounted on FR-4 board of
1452 mm
2
x 1.6 mmt
T
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
D
0.01
0.1
1
10
100
0.1
1
10
100
I
D(DC)
I
D(pulse)
100 ms
10 ms
DC
Single Pulse
Mounted on FR-4 board of
1452 mm
2
x 1.6 mmt
R
DSon)
Lmted
(V
GS
=4.5V)
PW =1
m
i
s
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
t
°
C
0.1
1
10
100
1000
MOSFET
SBD
Single Pulse
Mounted on FR-4 board of 1452 mm
2
x 1.6 mmt
Cu pad of 645 mm
2
x 70
μ
m (1 in
2
)
PW - Pulse Width - s
100
μ
1 m 10 m 100 m 1 10 100 1000
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