參數(shù)資料
型號(hào)： UPD44323362F1-C40-FJ1
廠商： NEC Corp.
英文描述： 32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 1M-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
中文描述： 32兆位CMOS同步快速靜態(tài)RAM的100萬(wàn)字的36位HSTL接口/寄存器間/晚寫
文件頁(yè)數(shù)： 8/28頁(yè)
文件大?。?/td> 252K
代理商： UPD44323362F1-C40-FJ1
8
Data Sheet M16379EJ4V0DS
μ
PD44323362
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Input leakage current
I
LI
V
IN
= 0 to V
DD
–5
+
5
μ
A
DQ leakage current
I
LO
V
I/O
= 0 to V
DD
Q, /SS = V
IH
or /G = V
IH
–5
+
5
μ
A
Operating supply current
I
CC
V
IN
= V
IH
or V
IL
, /SS = V
IL
, ZZ = V
IL
,
550
mA
cycle = 250 MHz, IDQ = 0 mA
Quiescent active power
I
CC2
V
IN
= V
IH
or V
IL
, /SS = V
IL
, ZZ = V
IL
,
250
mA
supply current
Cycle = 4 MHz, IDQ = 0 mA
Sleep mode power supply
I
SBZZ
ZZ = V
IH
, All other inputs = V
IH
or V
IL
,
150
mA
current
Cycle = DC, IDQ = 0 mA
Power supply standby
I
SBSS
V
IN
= V
IH
or V
IL
, /SS = V
IH
, ZZ = V
IL
,
300
mA
current
Cycle = 250 MHz, IDQ = 0 mA
Output Voltage on Controlled Impedance Push-Pull Output Buffer Mode (VZQ = IZQ
×
RQ)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Low level output voltage
V
OL
I
OL
= (V
DD
Q/2) / (RQ/5)
±
15%
V
SS
V
DD
Q/2
V
@V
OL
= V
DD
Q / 2 (175
< RQ < 350
)
High level output voltage
V
OH
I
OH
= (V
DD
Q/2) / (RQ/5)
±
15%
V
DD
Q/2
V
DD
Q
V
@V
OH
= V
DD
Q / 2 (175
< RQ < 350
)
Output Voltage on Push-Pull Output Buffer Mode (VZQ = V
DD
)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Low level output voltage
V
OL
I
OL
=
+
4 mA
–
0.3
V
High level output voltage
V
OH
I
OH
= –4 mA
V
DD
Q – 0.3
–
V
相關(guān)PDF資料
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參數(shù)描述
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UPD44324362BF5-E40-FQ1-A 制造商:Renesas Electronics Corporation 功能描述:36MB, DDRII SRAM - Trays 制造商:Renesas Electronics Corporation 功能描述:IC SRAM DDRII 36MBIT 165BGA
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